TIDUFD2 May   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Terminology
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Input Capacitors Selection
      2. 2.2.2 DC Side
      3. 2.2.3 AC Side
    3. 2.3 Highlighted Products
      1. 2.3.1 TMDSCNCD28P55X - controlCARD Evaluation Module
        1. 2.3.1.1 Hardware Features
        2. 2.3.1.2 Software Features
      2. 2.3.2 LMG2100R026 - 100V, 53A GaN Half-Bridge Power Stage
      3. 2.3.3 LMG365xR035 - 650V 35mΩ GaN FET With Integrated Driver and Protection
      4. 2.3.4 TMCS1123 - Precision 250kHz Hall-Effect Current Sensor With Reinforced Isolation
      5. 2.3.5 TMCS1133 - Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation
      6. 2.3.6 INA185 - 26V, 350kHz, Bidirectional, High-Precision Current Sense Amplifier
      7. 2.3.7 LM5164 – 100V Input, 1A Synchronous Buck DC-DC Converter With Ultra-Low IQ
      8. 2.3.8 ISO6762 – General-Purpose Six-Channel Reinforced Digital Isolators With Robust EMC
  9. 3System Design Theory
    1. 3.1 Isolation for Solar Inverters
    2. 3.2 Topology Overview
    3. 3.3 Control Theory
      1. 3.3.1 Single and Extended Phase Shift Modulation Technique
      2. 3.3.2 Zero Voltage Switching and Circulating Current
      3. 3.3.3 Optimized Control Method
      4. 3.3.4 Dead-Time Compensation
      5. 3.3.5 Frequency Modulation
      6. 3.3.6 Controller Block Diagram
    4. 3.4 MPPT and Input Voltage Ripple
  10. 4Hardware, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
    2. 4.2 Test Setup
      1. 4.2.1 Board Check
      2. 4.2.2 DC-DC Tests
      3. 4.2.3 DC-AC Tests
    3. 4.3 Test Results
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author

2.3.3 LMG365xR035 - 650V 35mΩ GaN FET With Integrated Driver and Protection

The LMG365xR035 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. Adjustable gate driver strength allows the control of turn on and maximum turn off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate can be varied from 10V/ns to 100V/ns, while the turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include undervoltage lockout (UVLO), cycle-by-cycle overcurrent limit, short-circuit and overtemperature protection. The LMG3651R035 provides a 5V LDO output on LDO5V pin that can be used to power external digital isolator. The LMG3656R035 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3657R035 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.