TIDUFD2 May   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Terminology
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Input Capacitors Selection
      2. 2.2.2 DC Side
      3. 2.2.3 AC Side
    3. 2.3 Highlighted Products
      1. 2.3.1 TMDSCNCD28P55X - controlCARD Evaluation Module
        1. 2.3.1.1 Hardware Features
        2. 2.3.1.2 Software Features
      2. 2.3.2 LMG2100R026 - 100V, 53A GaN Half-Bridge Power Stage
      3. 2.3.3 LMG365xR035 - 650V 35mΩ GaN FET With Integrated Driver and Protection
      4. 2.3.4 TMCS1123 - Precision 250kHz Hall-Effect Current Sensor With Reinforced Isolation
      5. 2.3.5 TMCS1133 - Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation
      6. 2.3.6 INA185 - 26V, 350kHz, Bidirectional, High-Precision Current Sense Amplifier
      7. 2.3.7 LM5164 – 100V Input, 1A Synchronous Buck DC-DC Converter With Ultra-Low IQ
      8. 2.3.8 ISO6762 – General-Purpose Six-Channel Reinforced Digital Isolators With Robust EMC
  9. 3System Design Theory
    1. 3.1 Isolation for Solar Inverters
    2. 3.2 Topology Overview
    3. 3.3 Control Theory
      1. 3.3.1 Single and Extended Phase Shift Modulation Technique
      2. 3.3.2 Zero Voltage Switching and Circulating Current
      3. 3.3.3 Optimized Control Method
      4. 3.3.4 Dead-Time Compensation
      5. 3.3.5 Frequency Modulation
      6. 3.3.6 Controller Block Diagram
    4. 3.4 MPPT and Input Voltage Ripple
  10. 4Hardware, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
    2. 4.2 Test Setup
      1. 4.2.1 Board Check
      2. 4.2.2 DC-DC Tests
      3. 4.2.3 DC-AC Tests
    3. 4.3 Test Results
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author

2.3.2 LMG2100R026 - 100V, 53A GaN Half-Bridge Power Stage

The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion because the GaN FETs have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the two GaN FETs are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R026 device is available in a 7.0mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs. The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique provides the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. This device is an excellent choice for applications requiring high-frequency, high-efficiency operation in a small form factor.