Product details

Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 500000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 500000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 82 ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 VRMS
    • Reinforced working voltage: 1100 VDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity drift: ±20 ppm/°C
    • Offset error: ±0.2 mV
    • Offset drift: ±2 µV/°C
    • Non-linearity: ±0.1%
  • Low lifetime drift: ±0.5% (maximum)
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Signal bandwidth: 500 kHz
  • Low propagation delay: 95 ns
  • Fast overcurrent detection response: 100 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1126x6x: 15 mV/A
    • TMCS1126x1x: 25 mV/A
    • TMCS1126x7x: 30 mV/A
    • TMCS1126x9x: 33 mV/A
    • TMCS1126x8x: 40 mV/A
    • TMCS1126x2x: 50 mV/A
    • TMCS1126x3x: 75 mV/A
    • TMCS1126x4x: 100 mV/A
    • TMCS1126x5x: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 82 ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 VRMS
    • Reinforced working voltage: 1100 VDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity drift: ±20 ppm/°C
    • Offset error: ±0.2 mV
    • Offset drift: ±2 µV/°C
    • Non-linearity: ±0.1%
  • Low lifetime drift: ±0.5% (maximum)
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Signal bandwidth: 500 kHz
  • Low propagation delay: 95 ns
  • Fast overcurrent detection response: 100 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1126x6x: 15 mV/A
    • TMCS1126x1x: 25 mV/A
    • TMCS1126x7x: 30 mV/A
    • TMCS1126x9x: 33 mV/A
    • TMCS1126x8x: 40 mV/A
    • TMCS1126x2x: 50 mV/A
    • TMCS1126x3x: 75 mV/A
    • TMCS1126x4x: 100 mV/A
    • TMCS1126x5x: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.45% maximum total error over temperature and lifetime with no system level calibration, or less than 1% maximum total error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±103A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000VRMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100VDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides the TMCS1126xxB as a lower-cost option.

The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.45% maximum total error over temperature and lifetime with no system level calibration, or less than 1% maximum total error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±103A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000VRMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100VDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides the TMCS1126xxB as a lower-cost option.

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Design & development

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Evaluation board

TMCS-A-ADAPTER-EVM — TMCS isolated Hall-effect current sensor adapter card for DVG, DVF or DZP packages (IC not included)

The TMCS-A-ADAPTER-EVM is an evaluation module (EVM) intended to facilitate rapid, convenient use of TMCS isolated Hall-effect precision current sense monitors that use the DVG, DVF, or DZP packages. This EVM allows the user push up to 90A current through the Hall-input side while measuring the (...)

User guide: PDF | HTML
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Evaluation board

TMCS1126EVM — TMCS1126 evaluation module for isolated Hall-effect current sensing

The TMCS1126EVM is a tool intended to facilitate rapid, convenient use of the TMCS1126, an isolated Hall-effect precision current sense monitor utilizing an internal reference. This evaluation module allows the user to push the max operating current through the Hall-input side while measuring the (...)
User guide: PDF | HTML
Reference designs

TIDA-010937 — Isolated low delay high PWM rejection Hall current sense reference design with digital interface

This reference design demonstrates an accurate low latency reinforced isolated bidirectional current sense system using the TMCS1123 precision Hall-effect current sensor for reliable phase current and DC-link current sensing with three phase inverters up to ±62A and less than 100ns over-current (...)
Design guide: PDF
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SOIC (DVG) 10 View options

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