Product details

Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 1000000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 1000000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 75 A RMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 V RMS
    • Reinforced working voltage: 1100 V DC
  • High accuracy
    • Sensitivity error: ± 0.3%
    • Sensitivity drift: ± 20 ppm/°C
    • Offset error: ± 1 mV
    • Offset drift: ± 20 µV/°C
    • Non-linearity: ± 0.1%
  • Low lifetime drift: ± 0.5% (maximum)
  • High immunity to external magnetic fields
  • Low power supply rejection ratio: 60 dB
  • Signal bandwidth: 1 MHz
  • Low propagation delay: 80 ns
  • Fast overcurrent detection response: 500 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1133x1A: 25 mV/A
    • TMCS1133B8A: 33 mV/A
    • TMCS1133x2A: 50 mV/A
    • TMCS1133x3A: 75 mV/A
    • TMCS1133x4A: 100 mV/A
    • TMCS1133x5A: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 75 A RMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 V RMS
    • Reinforced working voltage: 1100 V DC
  • High accuracy
    • Sensitivity error: ± 0.3%
    • Sensitivity drift: ± 20 ppm/°C
    • Offset error: ± 1 mV
    • Offset drift: ± 20 µV/°C
    • Non-linearity: ± 0.1%
  • Low lifetime drift: ± 0.5% (maximum)
  • High immunity to external magnetic fields
  • Low power supply rejection ratio: 60 dB
  • Signal bandwidth: 1 MHz
  • Low propagation delay: 80 ns
  • Fast overcurrent detection response: 500 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1133x1A: 25 mV/A
    • TMCS1133B8A: 33 mV/A
    • TMCS1133x2A: 50 mV/A
    • TMCS1133x3A: 75 mV/A
    • TMCS1133x4A: 100 mV/A
    • TMCS1133x5A: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1133 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 2.5% maximum total error over temperature and lifetime with no system level calibration, or less than 1.5% maximum total error with a one-time room temperature calibration (including both lifetime and temperature drift).

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ± 96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000V RMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100V DC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the TMCS1133 to operate from a single 3V to 5.5V power supply, eliminates ratiometry errors, and improves supply noise rejection.

The TMCS1133 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 2.5% maximum total error over temperature and lifetime with no system level calibration, or less than 1.5% maximum total error with a one-time room temperature calibration (including both lifetime and temperature drift).

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ± 96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000V RMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100V DC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the TMCS1133 to operate from a single 3V to 5.5V power supply, eliminates ratiometry errors, and improves supply noise rejection.

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Technical documentation

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* Data sheet TMCS1133Precision1 MHzHall-Effect Current Sensor With ±1100V ReinforcedIsolationWorking Voltage, Overcurrent Detectionand Ambient Field Rejection datasheet PDF | HTML 30 Oct 2023
Certificate TMCS1133AEVM EU Declaration of Conformity (DoC) 21 Aug 2023
Certificate TMCS1133BEVM EU Declaration of Conformity (DoC) 21 Aug 2023
Certificate TMCS1133CEVM EU Declaration of Conformity (DoC) 21 Aug 2023
Application brief Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements (Rev. A) 24 Jul 2023

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TMCS-A-ADAPTER-EVM — TMCS isolated Hall-effect current sensor adapter card for DVG, DVF or DZP packages (IC not included)

The TMCS-A-ADAPTER-EVM is an evaluation module (EVM) intended to facilitate rapid, convenient use of TMCS isolated Hall-effect precision current sense monitors that use the DVG, DVF, or DZP packages. This EVM allows the user push up to 90A current through the Hall-input side while measuring the (...)

User guide: PDF | HTML
Not available on TI.com
Evaluation board

TMCS1133EVM — TMCS1133 evaluation module for isolated Hall-effect current sensing

The TMCS1133EVM evaluation module (EVM) is a tool intended to facilitate rapid, convenient use of the TMCS1133, an isolated Hall-effect precision current-sense monitor using an internal ratiometric reference. This EVM allows the user to push the max operating current through the Hall-input side (...)

User guide: PDF | HTML
Reference designs

PMP23338 — 3.6kW single-phase totem-pole bridgeless PFC reference design with e-meter functionality

This reference design is a Gallium nitride (GaN) based, 3.6kW, single-phase continuous conduction mode (CCM) totem-pole bridgeless power factor correction (PFC) converter, targeting M-CRPS power supply. This design includes e-meter functionality with 0.5% accuracy, eliminating the need for (...)
Test report: PDF
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SOIC (DVG) 10 View options

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