Gehäuseinformationen
| Gehäuse | Pins WSON (NGT) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 4.500 | LARGE T&R |
Merkmale von LM5109B
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
- Inputs Compatible With Independent TTL and CMOS
- Bootstrap Supply Voltage to 108-V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000-pF Load With 15-ns Rise and Fall Times
- Excellent Propagation Delay Matching (2 ns Typical)
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package
Beschreibung von LM5109B
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.