Gehäuseinformationen
| Gehäuse | Pins HVSSOP (DGN) | 8 |
| Betriebstemperaturbereich (°C) |
| Gehäusemenge | Träger 1.000 | SMALL T&R |
Merkmale von LM5112
- LM5112-Q1 is Qualified for Automotive Applications
- AEC-Q100 Grade 1 Qualified
- Manufactured on an Automotive Grade Flow
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7-A Sink and 3-A Source Current
- Fast Propagation Times: 25 ns (Typical)
- Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load - Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
- Supply Rail Undervoltage Lockout Protection
- Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation - Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package - Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
Beschreibung von LM5112
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.