Gehäuseinformationen
| Gehäuse | Pins WSON (DPR) | 10 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 4.500 | LARGE T&R |
Merkmale von LM5113-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With
the Following Results:
- Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
- Independent High-Side and Low-Side
TTL Logic Inputs - 1.2-A Peak Source, 5-A Peak Sink Output Current
- High-Side Floating Bias Voltage Rail
Operates up to 100-VDC - Internal Bootstrap Supply Voltage Clamping
- Split Outputs for Adjustable
Turnon and Turnoff Strength - 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
- Fast Propagation Times (28 ns Typical)
- Excellent Propagation Delay Matching
(1.5 ns Typical) - Supply Rail Undervoltage Lockout
- Low Power Consumption
Beschreibung von LM5113-Q1
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.