Home Logik- & Spannungsumsetzung Logikgatter NAND-Gatter
Home
Logik- & Spannungsumsetzung
Logikgatter
NAND-Gatter

SN74HC10-EP

AKTIV

NAND-Gatter, 3 Kanäle, 3 Eingänge, 2 V bis 6 V, 5,2 mA Treiberstärke, verbessertes Produkt

Jetzt bestellen
Datenblatt

SN74HC10-EP

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Technology family HC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10-50ns) Data rate (max) (Mbps) 28 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family HC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10-50ns) Data rate (max) (Mbps) 28 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
TSSOP (PW) 14 32 mm² (5 mm × 6.4 mm) SOIC (D) 14 51.9 mm² (8.65 mm × 6 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C)\ or Y = A\ + B\ + C\ in positive logic.

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C)\ or Y = A\ + B\ + C\ in positive logic.
filter Andere NAND-Gatter suchen
Herunterladen

Technische Dokumentation

Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 2
Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt SN74HC10-EP datasheet 06.01.2004
* VID SN74HC10-EP VID V6204688 21.06.2016

Bestellen & Qualität

Support und Schulungen

TI E2E™-Foren mit technischem Support von TI-Ingenieuren

Alle Forenthemen auf Englisch anzeigen

Inhalte werden ohne Gewähr von TI und der Community bereitgestellt. Sie stellen keine Spezifikationen von TI dar. Siehe Nutzungsbedingungen.

Bei Fragen zu den Themen Qualität, Gehäuse oder Bestellung von TI-Produkten siehe TI-Support. ​​​​​​​​​​​​​​