Gehäuseinformationen
| Gehäuse | Pins VSON (DRB) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 250 | SMALL T&R |
Merkmale von TPS28225
- Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
- Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
- Wide Power System Train Input Voltage: 3V Up to 27V
- Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
- Capable to Drive MOSFETs with ≥40A Current per Phase
- High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
- Capable to Propagate <30ns Input PWM Pulses
- Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
- 3-State PWM Input for Power Stage Shutdown
- Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
- Thermal Shutdown
- UVLO Protection
- Internal Bootstrap Diode
- Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
- High Performance Replacement for Popular 3-State Input Drivers
Beschreibung von TPS28225
The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.