TPS28225

AKTIV

Halbbrücken-Gate-Treiber, 4 A, 27 V mit 4 V UVLO für synchrone Gleichrichtung

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Datenblatt

document-pdfAcrobat TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver datasheet (Rev. E) (Englisch) PDF | HTML

TPS28225

AKTIV

Datenblatt

Jetzt bestellen

Produktdetails

Bootstrap supply voltage (max) (V)

33

Power switch

MOSFET

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

8

Peak output current (A)

4

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

3.5

Rating

Catalog

Propagation delay time (µs)

0.014

Rise time (ns)

10

Fall time (ns)

5

Iq (mA)

0.35

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

0

Features

(x1) PWM, Synchronous Rectification

Driver configuration

Single

Bootstrap supply voltage (max) (V)

33

Power switch

MOSFET

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

8

Peak output current (A)

4

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

3.5

Rating

Catalog

Propagation delay time (µs)

0.014

Rise time (ns)

10

Fall time (ns)

5

Iq (mA)

0.35

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

0

Features

(x1) PWM, Synchronous Rectification

Driver configuration

Single

VSON (DRB)

8

9 mm² (3 mm × 3 mm)

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
Wide Power System Train Input Voltage: 3V Up to 27V
Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
Capable to Drive MOSFETs with ≥40A Current per Phase
High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
Capable to Propagate <30ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
Thermal Shutdown
UVLO Protection
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
High Performance Replacement for Popular 3-State Input Drivers

Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
Wide Power System Train Input Voltage: 3V Up to 27V
Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
Capable to Drive MOSFETs with ≥40A Current per Phase
High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
Capable to Propagate <30ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
Thermal Shutdown
UVLO Protection
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
High Performance Replacement for Popular 3-State Input Drivers

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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Technische Dokumentation

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Design und Entwicklung

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