Gehäuseinformationen
| Gehäuse | Pins WQFN (RTE) | 16 |
| Betriebstemperaturbereich (°C) -40 to 150 |
| Gehäusemenge | Träger 250 | SMALL T&R |
Merkmale von TPS43061
- 58-V Maximum Output Voltage
- 4.5 to 38 V (40 V Absolute Max)
VIN Range - TPS43060: 7.5-V Gate Drive Optimized
for Standard Threshold MOSFETs - TPS43061: 5.5-V Gate Drive Optimized
for Low Qg NexFET™ Power MOSFETs - Current-Mode Control With Internal
Slope Compensation - Adjustable Frequency from 50 kHz to
1 MHz - Synchronization Capability to External
Clock - Adjustable Soft-Start Time
- Inductor DCR or Resistor Current Sensing
- Output Voltage Power-Good Indicator
- ±0.8% Feedback Reference Voltage
- 5-µA Shutdown Supply Current
- 600-µA Operating Quiescent Current
- Integrated Bootstrap Diode (TPS43061)
- Cycle-by-Cycle Current Limit and Thermal
Shutdown - Adjustable Undervoltage Lockout (UVLO)
and Output Overvoltage Protection - Small 16-Pin WQFN (3 mm × 3 mm)
Package With PowerPAD™ - –40°C to 150°C Operating
TJ Range
Beschreibung von TPS43061
The TPS43060 and TPS43061 are low IQ current-mode synchronous boost controllers with wide-input voltage range from 4.5 to 38 V (40 V absolute max) and boosted output range up to 58 V. Synchronous rectification enables high-efficiency for high-current applications, and lossless inductor DCR sensing further improves efficiency. The resulting low-power losses combined with a 3-mm × 3-mm WQFN-16 package with PowerPAD™ supports high power-density and high-reliability boost converter solutions over extended (–40°C to 150°C) temperature range.
The TPS43060 includes a 7.5-V gate drive supply, which is suitable to drive a broad range of MOSFETs. The TPS43061 has a 5.5-V gate drive supply and driver strength optimized for low Qg NexFET power MOSFETs. Also, TPS43061 provides an integrated bootstrap diode for the high-side gate driver to reduce the external parts count.