Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 16 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von UCC21220
- Supports basic and functional isolation
- CMTI greater than 100V/ns
- 4A peak source, 6A peak sink output
- Switching parameters:
- 40ns maximum propagation delay
- 5ns maximum delay matching
- 5.5ns maximum pulse-width distortion
- 35µs maximum VDD power-up delay
- Up to 18V VDD output drive supply
- 5V and 8V VDD UVLO Options
- Operating temperature range (TA) –40°C to 125°C
- Narrow body SOIC-16 (D) package
- Rejects input pulses shorter than 5ns
- TTL and CMOS compatible inputs
- Safety-related certifications:
- 4242VPK isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1 (planned)
- 3000VRMS isolation for 1 minute per UL 1577
- CQC certification per GB4943.1-2011 (planned)
Beschreibung von UCC21220
The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100V/ns common-mode transient immunity (CMTI).
These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.
Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, INA/B pin rejects input transient shorter than 5ns, both inputs and outputs can withstand –2V spikes for 200ns, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2.1V when unpowered or floated.
With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.