Gehäuseinformationen
| Gehäuse | Pins SOIC (DWV) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 64 | TUBE |
Merkmale von UCC5390-Q1
- 5kVRMS single channel isolated gate driver
- AEC-Q100 qualified for automotive
applications
- Temperature grade 1
- HBM ESD classification level H2
- CDM ESD classification level C6
- Functional Safety Quality-Managed
- 12V UVLO referenced to GND2
- 8-pin DWV (8.5mm creepage) package
- 60ns (typical) propagation delay
- Small part-to-part skew in propagation delay
- 100V/ns minimum CMTI
- 10A minimum peak current
- 3V to 15V input supply voltage
- Up to 33V driver supply voltage
- Negative 5V handling capability on input pins
- Safety-related certifications:
- 7000VPK isolation (DWV) per DIN V VDE V 0884-11:2017-01 (planned)
- 5000VRMS (DWV) isolation rating for 1 minute per UL 1577
- CQC Certification per GB4943.1-2011
- CMOS inputs
- Operating junction temperature: –40°C to +150°C
Beschreibung von UCC5390-Q1
The UCC5390-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiC and IGBT switching behavior and robustness.
The UCC5390-Q1 is available in 8.5mm SOIC-8 (DWV) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. With its high drive strength and true UVLO detection, this device is a good fit for driving IGBTs and SiC MOSFETs in applications such as on-board chargers and traction inverters.
Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.