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LM5113-Q1

ACTIVO

Controlador de puerta de medio puente de 1.2 A/5 A y 100 V para GaNFET para automoción

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LM5113-Q1

ACTIVO
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Detalles del producto

Bootstrap supply voltage (max) (V) 100 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 100 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
WSON (DPR) 10 16 mm² (4 mm × 4 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos LM5113-Q1 Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. B) PDF | HTML 12/03/2018
Nota sobre la aplicación Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25/03/2024
Nota sobre la aplicación Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24/01/2024
Nota sobre la aplicación Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 15/11/2023
Nota sobre la aplicación Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 8/09/2023
Application brief GaN Applications PDF | HTML 10/08/2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 10/08/2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 4/08/2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 4/08/2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2/08/2022
Nota sobre la aplicación Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17/02/2022
Nota sobre la aplicación Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 7/04/2021
Nota sobre la aplicación Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12/05/2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28/02/2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28/02/2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22/10/2019
Nota sobre la aplicación GaN Gate Driver Layout Help 23/05/2019
Nota sobre la aplicación Maximizing DC/DC converter designs with UCC27282 18/01/2019
Nota sobre la aplicación UCC27282 Improving motor drive system robustness 11/01/2019
Informe A comprehensive methodology to qualify the reliability of GaN products 2/03/2015

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LM5113LLPEVB — Módulo de evaluación LM5113 de controlador de puerta de medio puente de 100 V y 1.2 A/5 A para FET d

La placa de evaluación LM5113 está diseñada para proporcionar a los ingenieros de diseño un convertidor reductor sincrónico para evaluar el LM5113, un controlador FET de GaN de modo de mejora de medio puente 100 V. El controlador LM5025 de modo de tensión de sujeción activa se utiliza para generar (...)

Guía del usuario: PDF | HTML
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Modelo de simulación

LM5113 PSpice Transient Model (Rev. D)

SNVM043D.ZIP (43 KB) - Modelo PSpice
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LM5113 TINA-TI Transient Reference Design (Rev. A)

SNVM460A.TSC (613 KB) - Diseño de referencia TINA-TI
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LM5113 TINA-TI Transient Spice Model (Rev. A)

SNVM459A.ZIP (16 KB) - Modelo TINA-TI Spice
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LM5113 Unencrypted Spice Transient Model (Rev. B)

SNVJ002B.ZIP (2 KB) - Modelo PSpice
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Herramienta de cálculo

SNVR523 — LM5113(-Q1) Component Design Calculator and Schematic Review

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Soporte y capacitación

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