LM5113-Q1
Controlador de puerta de medio puente de 1.2 A/5 A y 100 V para GaNFET para automoción
LM5113-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
- Independent High-Side and Low-Side
TTL Logic Inputs - 1.2-A Peak Source, 5-A Peak Sink Output Current
- High-Side Floating Bias Voltage Rail
Operates up to 100-VDC - Internal Bootstrap Supply Voltage Clamping
- Split Outputs for Adjustable
Turnon and Turnoff Strength - 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
- Fast Propagation Times (28 ns Typical)
- Excellent Propagation Delay Matching
(1.5 ns Typical) - Supply Rail Undervoltage Lockout
- Low Power Consumption
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
Documentación técnica
Tipo | Título | Fecha | ||
---|---|---|---|---|
* | Data sheet | LM5113-Q1 Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. B) | PDF | HTML | 12 mar 2018 |
Application note | Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits | PDF | HTML | 15 nov 2023 | |
Application brief | GaN Driver Schematic and Layout Recommendations | PDF | HTML | 10 ago 2022 | |
Application brief | Key Parameters and Driving Requirements of GaN FETs | PDF | HTML | 04 ago 2022 | |
Application brief | Nomenclature, Types, and Structure of GaN Transistors | PDF | HTML | 04 ago 2022 | |
Application brief | How GaN Enables More Efficient and Reduced Form Factor Power Supplies | PDF | HTML | 02 ago 2022 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 feb 2020 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 feb 2020 |
Diseño y desarrollo
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LM5113LLPEVB — Módulo de evaluación LM5113 de controlador de puerta de medio puente de 100 V y 1.2 A/5 A para FET d
The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride (GaN) FET driver. The active clamping voltage mode controller LM5025 is used to generate the PWM signals of the buck (...)
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PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI
Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
---|---|---|
WSON (DPR) | 10 | Ultra Librarian |
Pedidos y calidad
- RoHS
- REACH
- Marcado del dispositivo
- Acabado de plomo/material de la bola
- Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
- Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
- Contenido del material
- Resumen de calificaciones
- Monitoreo continuo de confiabilidad
- Lugar de fabricación
- Lugar de ensamblaje
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