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LM5113-Q1

ACTIVO

Controlador de puerta de medio puente de 1.2 A/5 A y 100 V para GaNFET para automoción

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LM5113-Q1

ACTIVO
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Detalles del producto

Bootstrap supply voltage (max) (V) 100 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 100 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
WSON (DPR) 10 16 mm² 4 x 4
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

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Documentación técnica

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* Data sheet LM5113-Q1 Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. B) PDF | HTML 12 mar 2018
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 mar 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24 ene 2024
Application note Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 15 nov 2023
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 sep 2023
Application brief GaN Applications PDF | HTML 10 ago 2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 10 ago 2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 ago 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 ago 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 ago 2022
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17 feb 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07 abr 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12 may 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 feb 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22 oct 2019
Application note GaN Gate Driver Layout Help 23 may 2019
Application note Maximizing DC/DC converter designs with UCC27282 18 ene 2019
Application note UCC27282 Improving motor drive system robustness 11 ene 2019
White paper A comprehensive methodology to qualify the reliability of GaN products 02 mar 2015

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LM5113LLPEVB — Módulo de evaluación LM5113 de controlador de puerta de medio puente de 100 V y 1.2 A/5 A para FET d

The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride (GaN) FET driver. The active clamping voltage mode controller LM5025 is used to generate the PWM signals of the buck (...)

Guía del usuario: PDF | HTML
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Modelo de simulación

LM5113 PSpice Transient Model (Rev. D)

SNVM043D.ZIP (43 KB) - PSpice Model
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Modelo de simulación

LM5113 TINA-TI Transient Reference Design (Rev. A)

SNVM460A.TSC (613 KB) - TINA-TI Reference Design
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Modelo de simulación

LM5113 TINA-TI Transient Spice Model (Rev. A)

SNVM459A.ZIP (16 KB) - TINA-TI Spice Model
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Modelo de simulación

LM5113 Unencrypted Spice Transient Model (Rev. B)

SNVJ002B.ZIP (2 KB) - PSpice Model
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Herramienta de cálculo

SNVR523 — LM5113(-Q1) Component Design Calculator and Schematic Review

Productos y hardware compatibles

Productos y hardware compatibles

Productos
Controladores de medio puente
  • LM5113-Q1 — Controlador de puerta de medio puente de 1.2 A/5 A y 100 V para GaNFET para automoción
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® para TI es un entorno de diseño y simulación que ayuda a evaluar la funcionalidad de los circuitos analógicos. Esta completa suite de diseño y simulación utiliza un motor de análisis analógico de Cadence®. Disponible sin ningún costo, PSpice para TI incluye una de las bibliotecas de modelos (...)
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
WSON (DPR) 10 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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