SN54ABT125

ACTIVO

Búferes de 4 canales, 4.5 V a 5.5 V con entradas CMOS compatibles con TTL y salidas de 3 estados de

Detalles del producto

Technology family ABT Number of channels 4 IOL (max) (mA) 64 Supply current (max) (µA) 250 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
Technology family ABT Number of channels 4 IOL (max) (mA) 64 Supply current (max) (µA) 250 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
CFP (W) 14 58.023 mm² (— mm × — mm) CDIP (J) 14 130.4652 mm² (— mm × — mm) LCCC (FK) 20 79.0321 mm² (— mm × — mm)
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff and Power-Up 3-State Support Hot Insertion
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff and Power-Up 3-State Support Hot Insertion
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

The ’ABT125 quadruple bus buffer gates feature independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE)\ input is high.

These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The ’ABT125 quadruple bus buffer gates feature independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE)\ input is high.

These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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SN74HCT125 ACTIVO Búferes de 4 canales, 4.5 V a 5.5 V con entradas CMOS compatibles con TTL y salidas de 3 estados Voltage range 4.5V to 5.5V, average propagation delay 22ns, average drive strength 4mA

Documentación técnica

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Ver todo 2
Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos SN54ABT125, SN74ABT125 datasheet (Rev. I) 30/10/2002
* SMD SN54ABT125 SMD 5962-96768 21/06/2016

Diseño y desarrollo

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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
CFP (W) 14 Ultra Librarian
CDIP (J) 14 Ultra Librarian
LCCC (FK) 20 Ultra Librarian

Pedidos y calidad

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