Inicio Gestión de la energía Interruptores de potencia Relés de estado sólido

TPSI2140-Q1

ACTIVO

Interruptor aislado para automoción de 1,200 V, 50 mA, con valor nominal de avalancha de 2 mA

Detalles del producto

Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

Descargar Ver vídeo con transcripción Video

Documentación técnica

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TPSI2140Q1EVM — Módulo de evaluación TPSI2140-Q1 para interruptor aislado de 1,200 V y 50 mA con valor nominal de av

El módulo de evaluación TPSI2140Q1EVM es una placa de dos capas de cobre que contiene múltiples puntos de prueba y puentes para evaluar completamente la funcionalidad del dispositivo.

Guía del usuario: PDF | HTML
Herramienta de simulación

CMSO-3P-BCS — simulador de celdas de batería comemso

El simulador de celdas de batería (BCS) es el núcleo de cualquier sistema de gestión de baterías de prueba (BMS). Permite simular todos los estados y fallos necesarios para el BMS a nivel de celda.
Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Diseños de referencia

TIDA-010232 — AFE para la supervisión del aislamiento en la carga de vehículos eléctricos de alta tensión y el dis

Este diseño de referencia cuenta con un método de monitoreo de aislamiento de CC de puente eléctrico (DC‑IM) que permite un mecanismo preciso de detección de fugas de aislamiento simétrico y asimétrico y un mecanismo de detección de resistencia de aislamiento. Presentamos una nueva generación de (...)
Design guide: PDF
Diseños de referencia

TIDA-01513 — Diseño de referencia de mediciones de fugas de aislamiento y alta tensión para automoción

The function of this reference design is to monitor the isolation resistance of a high-voltage bus to the chassis ground. Monitoring the isolation strength of coupling devices and components from high voltage to the chassis ground is a necessary feature in HEV’s and EV’s as battery (...)
Design guide: PDF
Esquema: PDF
Paquete Pasadores Descargar
SOIC (DWQ) 11 Ver opciones

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Los productos recomendados pueden tener parámetros, módulos de evaluación o diseños de referencia relacionados con este producto de TI.

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.

Si tiene preguntas sobre la calidad, el paquete o el pedido de productos de TI, consulte el soporte de TI. ​​​​​​​​​​​​​​

Videos