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UCC5390-Q1

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Automotive Basic/Reinforced, 17A/17A single-channel isolated gate driver w/ Emitter-referenced UVLO

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UCC5390-Q1

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Detalles del producto

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 7000 Peak output current (A) 17 Peak output current (source) (typ) (A) 17 Peak output current (sink) (typ) (A) 17 Features UVLO reference to ground Output VCC/VDD (min) (V) 13.2 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 26 Fall time (ns) 22 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety-Capable
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 7000 Peak output current (A) 17 Peak output current (source) (typ) (A) 17 Peak output current (sink) (typ) (A) 17 Features UVLO reference to ground Output VCC/VDD (min) (V) 13.2 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 26 Fall time (ns) 22 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety-Capable
SOIC (DWV) 8 67.275 mm² (5.85 mm × 11.5 mm)
  • 5kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1
    • HBM ESD classification level H2
    • CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • 12V UVLO referenced to GND2
  • 8-pin DWV (8.5mm creepage) package
  • 60ns (typical) propagation delay
  • Small part-to-part skew in propagation delay
  • 100V/ns minimum CMTI
  • 10A minimum peak current
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
  • Negative 5V handling capability on input pins
  • Safety-related certifications:
    • 7000VPK isolation (DWV) per DIN V VDE V 0884-11:2017-01 (planned)
    • 5000VRMS (DWV) isolation rating for 1 minute per UL 1577
    • CQC Certification per GB4943.1-2011
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C
  • 5kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1
    • HBM ESD classification level H2
    • CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • 12V UVLO referenced to GND2
  • 8-pin DWV (8.5mm creepage) package
  • 60ns (typical) propagation delay
  • Small part-to-part skew in propagation delay
  • 100V/ns minimum CMTI
  • 10A minimum peak current
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
  • Negative 5V handling capability on input pins
  • Safety-related certifications:
    • 7000VPK isolation (DWV) per DIN V VDE V 0884-11:2017-01 (planned)
    • 5000VRMS (DWV) isolation rating for 1 minute per UL 1577
    • CQC Certification per GB4943.1-2011
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C

The UCC5390-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiC and IGBT switching behavior and robustness.

The UCC5390-Q1 is available in 8.5mm SOIC-8 (DWV) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. With its high drive strength and true UVLO detection, this device is a good fit for driving IGBTs and SiC MOSFETs in applications such as on-board chargers and traction inverters.

Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

The UCC5390-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiC and IGBT switching behavior and robustness.

The UCC5390-Q1 is available in 8.5mm SOIC-8 (DWV) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. With its high drive strength and true UVLO detection, this device is a good fit for driving IGBTs and SiC MOSFETs in applications such as on-board chargers and traction inverters.

Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.
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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos UCC5390-Q1 Single-Channel Isolated Gate Driver for SiC/IGBT and Automotive Applications datasheet (Rev. B) PDF | HTML 14/02/2024
Certificado VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. AA) 11/06/2026
Certificado UL Certification E181974 Vol 4. Sec 7 (Rev. D) 8/09/2025
Certificado UCC5310 CQC Certificate of Product Certification PDF | HTML 16/08/2023
Información sobre seguridad funcional UCC5390-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 16/03/2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16/12/2021

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