LM5113-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
- Independent High-Side and Low-Side
TTL Logic Inputs - 1.2-A Peak Source, 5-A Peak Sink Output Current
- High-Side Floating Bias Voltage Rail
Operates up to 100-VDC - Internal Bootstrap Supply Voltage Clamping
- Split Outputs for Adjustable
Turnon and Turnoff Strength - 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
- Fast Propagation Times (28 ns Typical)
- Excellent Propagation Delay Matching
(1.5 ns Typical) - Supply Rail Undervoltage Lockout
- Low Power Consumption
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
기술 문서
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | LM5113-Q1 Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. B) | PDF | HTML | 2018/03/12 |
| Application note | Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits | PDF | HTML | 2023/11/15 | |
| Application brief | GaN Driver Schematic and Layout Recommendations | PDF | HTML | 2022/08/10 | |
| Application brief | Key Parameters and Driving Requirements of GaN FETs | PDF | HTML | 2022/08/04 | |
| Application brief | Nomenclature, Types, and Structure of GaN Transistors | PDF | HTML | 2022/08/04 | |
| Application brief | How GaN Enables More Efficient and Reduced Form Factor Power Supplies | PDF | HTML | 2022/08/02 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
LM5113LLPEVB — LM5113 향상 모드 GaN FET를 위한 100V, 1.2A/5A, 하프 브리지 게이트 드라이버 평가 모듈
The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride (GaN) FET driver. The active clamping voltage mode controller LM5025 is used to generate the PWM signals of the buck (...)
LM5113 TINA-TI Transient Reference Design (Rev. A)
PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®
TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
| 패키지 | 핀 | 다운로드 |
|---|---|---|
| WSON (DPR) | 10 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.