TPSI2240-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2240-Q1 IAVA = 1mA for 60s pulses
-
TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses
- TPSI2240T-Q1 IAVA = 3mA for 60s pulses
- 1200V standoff voltage
- RON = 130Ω (TJ = 25°C)
- TON, TOFF < 700µs
- IOFF = 1.22µA at 1000V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 3.5µA OFF state current (TJ = 25°C)
-
Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
- Reinforced Isolation rating, VISO, up to 4750VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) | PDF | HTML | 2025. 12. 12 | |
| 애플리케이션 노트 | Design of Insulation Monitoring Device (IMD) in On-board Charger System With Active Single-Switch Architecture | PDF | HTML | 2026. 1. 30 | ||
| 기능 안전 정보 | TPSI2240-Q1, TPSI2240C-Q1, and TPSI2240T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 2026. 1. 26 | ||
| 애플리케이션 노트 | Design Considerations for Large Y-Capacitor Resistive-Bridge DC Insulation Monitoring Device | PDF | HTML | 2026. 1. 15 | ||
| 인증서 | TPSI2240Q1EVM EU Declaration of Conformity (DoC) | 2025. 7. 1 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TPSI2240Q1EVM — TPSI2240-Q1 평가 모듈
TPSI2240X-Q1-HIPOT-RESISTANCE-CALC — TPSI2240x-Q1 HiPot 설계 계산기
TIDA-010985 — 대형 Y cap 레퍼런스 설계가 적용된 800V DC 시스템용 저항 브리지 절연 모니터링 장치
이 레퍼런스 설계는 저항식 브리지 절연 모니터링 장치(IMD)를 특징으로 합니다. 이 설계는 대칭 및 비대칭 절연 저항 결함을 정확하게 감지합니다. 본 레퍼런스 설계는 대형 Y 커패시턴스(Y caps)를 갖춘 고전압 DC 시스템의 커패시턴스를 측정할 수 있습니다. 이 설계는 UL 표준에 따른 응답 시간 요구 사항을 충족합니다.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
주문 및 품질
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.