產品詳細資料

Function Protection Number of series cells (min) 2 Number of series cells (max) 7 Features FET drive, Low-side driver, Open wire (OW), Over-temperature (OT), Overcurrent during charge (OCC), Overcurrent during discharge (OCD), Overvoltage, Short-circuit Discharge (SCD), Under-temperature (UT), Undervoltage Operating current (typ) (µA) 6 Rating Catalog Vin (max) (V) 38.5 Operating temperature range (°C) -40 to 110 Battery overvoltage protection (min) (V) 1 Battery overvoltage protection (max) (V) 5.5
Function Protection Number of series cells (min) 2 Number of series cells (max) 7 Features FET drive, Low-side driver, Open wire (OW), Over-temperature (OT), Overcurrent during charge (OCC), Overcurrent during discharge (OCD), Overvoltage, Short-circuit Discharge (SCD), Under-temperature (UT), Undervoltage Operating current (typ) (µA) 6 Rating Catalog Vin (max) (V) 38.5 Operating temperature range (°C) -40 to 110 Battery overvoltage protection (min) (V) 1 Battery overvoltage protection (max) (V) 5.5
VQFN (RGR) 20 12.25 mm² 3.5 x 3.5
  • Primary or secondary voltage, current, and temperature protection for 2-series to 7-series cells with an autonomous recovery option
  • Voltage protection:
    • Cell overvoltage (COV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracy
    • Cell undervoltage (CUV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracy
  • Current protection:
    • Short circuit in discharge (SCD): 10 mV–500 mV, varying steps
    • Overcurrent in charge (OCC): 3 mV–123 mV, 2-mV steps
    • Overcurrent in discharge 1 and 2 (OCD1 and OCD2): 4 mV–200 mV, 2-mV steps
  • Temperature protection using external NTC thermistor:
    • Overtemperature in charge and discharge (OTC and OTD)
    • Undertemperature in charge and discharge (UTC and UTD)
    • Internal die overtemperature
  • Integrated low-side drivers for NFET protection with an optional autonomous recovery
  • Low power operation:
    • NORMAL mode, both FETs enabled: 8 µA
    • NORMAL mode, FETs disabled: 5 µA
    • SHUTDOWN Mode: < 1 µA
  • High voltage tolerance of 45 V on cell connect and select additional pins
  • Integrated one-time-programmable (OTP) memory for device settings, programmed by TI
  • Programmable interrupt for host processor, status information available through I 2C
  • 400-kHz I 2C serial communications with optional CRC support
  • Programmable LDO for external system usage
  • 20-pin QFN 3.5 mm × 3.5 mm × 0.9 mm (RGR) package
  • Primary or secondary voltage, current, and temperature protection for 2-series to 7-series cells with an autonomous recovery option
  • Voltage protection:
    • Cell overvoltage (COV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracy
    • Cell undervoltage (CUV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracy
  • Current protection:
    • Short circuit in discharge (SCD): 10 mV–500 mV, varying steps
    • Overcurrent in charge (OCC): 3 mV–123 mV, 2-mV steps
    • Overcurrent in discharge 1 and 2 (OCD1 and OCD2): 4 mV–200 mV, 2-mV steps
  • Temperature protection using external NTC thermistor:
    • Overtemperature in charge and discharge (OTC and OTD)
    • Undertemperature in charge and discharge (UTC and UTD)
    • Internal die overtemperature
  • Integrated low-side drivers for NFET protection with an optional autonomous recovery
  • Low power operation:
    • NORMAL mode, both FETs enabled: 8 µA
    • NORMAL mode, FETs disabled: 5 µA
    • SHUTDOWN Mode: < 1 µA
  • High voltage tolerance of 45 V on cell connect and select additional pins
  • Integrated one-time-programmable (OTP) memory for device settings, programmed by TI
  • Programmable interrupt for host processor, status information available through I 2C
  • 400-kHz I 2C serial communications with optional CRC support
  • Programmable LDO for external system usage
  • 20-pin QFN 3.5 mm × 3.5 mm × 0.9 mm (RGR) package
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類型 標題 日期
* Data sheet BQ77307 2-Series to 7-Series High Accuracy Battery Primary or Secondary Protector for Li-Ion, Li-Polymer, LiFePO4(LFP), and LTO Battery Packs datasheet PDF | HTML 2023年 12月 8日
User guide BQ77307 Technical Reference Manual PDF | HTML 2023年 12月 6日

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