產品詳細資料

Rating Catalog Integrated isolated power No Isolation rating Reinforced Number of channels 3 Forward/reverse channels 2 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 100 Surge isolation voltage (VIOSM) (VPK) 12800 Transient isolation voltage (VIOTM) (VPK) 8000 Withstand isolation voltage (VISO) (Vrms) 5700 CMTI (min) (V/µs) 85000 Operating temperature range (°C) -55 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.25 Propagation delay time (typ) (µs) 0.0107 Current consumption per channel (DC) (typ) (mA) 1.03 Current consumption per channel (1 Mbps) (typ) (mA) 1.67 Creepage (min) (mm) 8, 14.5 Clearance (min) (mm) 8, 14.5
Rating Catalog Integrated isolated power No Isolation rating Reinforced Number of channels 3 Forward/reverse channels 2 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 100 Surge isolation voltage (VIOSM) (VPK) 12800 Transient isolation voltage (VIOTM) (VPK) 8000 Withstand isolation voltage (VISO) (Vrms) 5700 CMTI (min) (V/µs) 85000 Operating temperature range (°C) -55 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.25 Propagation delay time (typ) (µs) 0.0107 Current consumption per channel (DC) (typ) (mA) 1.03 Current consumption per channel (1 Mbps) (typ) (mA) 1.67 Creepage (min) (mm) 8, 14.5 Clearance (min) (mm) 8, 14.5
SOIC (DW) 16 106.09 mm² 10.3 x 10.3 SOIC (DWW) 16 177.675 mm² 10.3 x 17.25
  • Signaling Rate: Up to 100 Mbps
  • Wide Supply Range: 2.25 V to 5.5 V
  • 2.25 V to 5.5 V Level Translation
  • Wide Temperature Range: –55°C to 125°C
  • Low Power Consumption, Typical 1.7 mA per
    Channel at 1 Mbps
  • Low Propagation Delay: 11 ns Typical
    (5-V Supplies)
  • Industry leading CMTI (min): ±100 kV/µs
  • Robust Electromagnetic Compatibility (EMC)
  • System-Level ESD, EFT, and Surge Immunity
  • Low Emissions
  • Isolation Barrier Life: > 40 Years
  • SOIC-16 Wide Body (DW) and Extra-Wide Body
    (DWW) Package Options
  • Safety-Related Certifications:
    • 8000 VPK Reinforced Isolation per DIN V VDE
      V 0884-10 (VDE V 0884-10):2006-12
    • 5.7 kVRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC
      60950-1 and IEC 60601-1 End Equipment
      Standards
    • CQC Certification per GB4943.1-2011
    • TUV Certification per EN 61010-1 and EN
      60950-1
    • All DW Package Certifications Complete;
      DWW Package Certifications Complete per
      UL, VDE, TUV and Planned for CSA and CQC
  • Signaling Rate: Up to 100 Mbps
  • Wide Supply Range: 2.25 V to 5.5 V
  • 2.25 V to 5.5 V Level Translation
  • Wide Temperature Range: –55°C to 125°C
  • Low Power Consumption, Typical 1.7 mA per
    Channel at 1 Mbps
  • Low Propagation Delay: 11 ns Typical
    (5-V Supplies)
  • Industry leading CMTI (min): ±100 kV/µs
  • Robust Electromagnetic Compatibility (EMC)
  • System-Level ESD, EFT, and Surge Immunity
  • Low Emissions
  • Isolation Barrier Life: > 40 Years
  • SOIC-16 Wide Body (DW) and Extra-Wide Body
    (DWW) Package Options
  • Safety-Related Certifications:
    • 8000 VPK Reinforced Isolation per DIN V VDE
      V 0884-10 (VDE V 0884-10):2006-12
    • 5.7 kVRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC
      60950-1 and IEC 60601-1 End Equipment
      Standards
    • CQC Certification per GB4943.1-2011
    • TUV Certification per EN 61010-1 and EN
      60950-1
    • All DW Package Certifications Complete;
      DWW Package Certifications Complete per
      UL, VDE, TUV and Planned for CSA and CQC

The ISO7831x device is a high-performance, 3-channel digital isolator with 8000-VPK isolation voltage. This device has reinforced isolation certifications according to VDE, CSA, TUV and CQC. The isolator provides high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os.

Each isolation channel has a logic input and output buffer separated by silicon dioxide (SiO2) insulation barrier. This device comes with enable pins which can be used to put the respective outputs in high impedance for multi-master driving applications and to reduce power consumption. The ISO7831x device has two forward and one reverse-direction channels. If the input power or signal is lost, the default output is high for the ISO7831 device and low for the ISO7831F device. See Device Functional Modes for further details.

Used in conjunction with isolated power supplies, this device helps prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic compatibility of ISO7831x has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions compliance. ISO7831x is available in a 16-pin SOIC wide-body (DW) and extra-wide body (DWW) packages.

The ISO7831x device is a high-performance, 3-channel digital isolator with 8000-VPK isolation voltage. This device has reinforced isolation certifications according to VDE, CSA, TUV and CQC. The isolator provides high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os.

Each isolation channel has a logic input and output buffer separated by silicon dioxide (SiO2) insulation barrier. This device comes with enable pins which can be used to put the respective outputs in high impedance for multi-master driving applications and to reduce power consumption. The ISO7831x device has two forward and one reverse-direction channels. If the input power or signal is lost, the default output is high for the ISO7831 device and low for the ISO7831F device. See Device Functional Modes for further details.

Used in conjunction with isolated power supplies, this device helps prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic compatibility of ISO7831x has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions compliance. ISO7831x is available in a 16-pin SOIC wide-body (DW) and extra-wide body (DWW) packages.

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類型 標題 日期
* Data sheet ISO7831x High-Performance, 8000-VPK Reinforced Triple Digital Isolators datasheet (Rev. B) PDF | HTML 2016年 6月 28日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Application note Digital Isolator Design Guide (Rev. G) PDF | HTML 2023年 9月 13日
White paper Improve Your System Performance by Replacing Optocouplers with Digital Isolators (Rev. C) PDF | HTML 2023年 9月 7日
White paper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 2023年 8月 31日
Certificate CQC Certificate for ISOxxDWx (Rev. J) 2023年 3月 27日
Certificate CSA Certificate for ISO78xxDWx 2023年 3月 13日
Certificate TUV Certificate for Isolation Devices (Rev. K) 2022年 8月 5日
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 2022年 8月 5日
White paper Why are Digital Isolators Certified to Meet Electrical Equipment Standards? 2021年 11月 16日
White paper Distance Through Insulation: How Digital Isolators Meet Certification Requiremen PDF | HTML 2021年 6月 11日
EVM User's guide Universal Digital Isolator Evaluation Module PDF | HTML 2021年 3月 4日
Functional safety information Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 2019年 9月 19日
White paper Direct-drive configuration for GaN devices (Rev. A) 2018年 11月 19日
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 2018年 8月 22日
Application brief Considerations for Selecting Digital Isolators 2018年 7月 24日
Functional safety information Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 2018年 5月 18日
Analog Design Journal How to reduce radiated emissions of digital isolators for systems with RF module 2018年 3月 26日
Application note Isolation Glossary (Rev. A) 2017年 9月 19日
Technical article Is integrated GaN changing the conventional wisdom? PDF | HTML 2016年 10月 7日
Analog Design Journal 4Q 2015 Analog Applications Journal 2015年 10月 30日
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology 2015年 10月 30日
EVM User's guide ISO784xx Quad-Channel Digital Isolator EVM User Guide 2014年 10月 17日
White paper Understanding electromagnetic compliance tests in digital isolators 2014年 10月 17日
White paper High-voltage reinforced isolation: Definitions and test methodologies 2014年 10月 16日

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開發板

DIGI-ISO-EVM — 通用數位隔離器評估模組

DIGI-ISO-EVM 是一款評估模組 (EVM),可評估任何 TI 單通道、雙通道、三通道、四通道或六通道數位隔離器裝置,並提供五種不同封裝 - 8 接腳窄體 SOIC (D)、8 接腳寬體 SOIC (DWV)、16 接腳寬體 SOIC (DWW)、16 接腳超寬體 SOIC (DWW) 和 16 接腳 (DBQ) 封裝。EVM 具備足夠 Berg 接腳選項,可用於評估具最少外部零組件的裝置。

使用指南: PDF | HTML
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開發板

ISO7842-EVM — 高抗擾度、5.7kVRMS 強化四通道 2/2 數位隔離器評估模組

The ISO7842 provides galvanic isolation up to 5700 VRMS for 1 minute per UL and 8000 VPK per VDE. This device has four isolated channels comprised of a logic input and output buffer separated by a silicon dioxide (SiO2) insulation barrier. Used in conjunction with isolated power supplies, this (...)

使用指南: PDF
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子卡

LMG3410-HB-EVM — LMG3410R070 600V 70mΩ GaN 半橋子板

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
使用指南: PDF
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模擬型號

ISO7831 IBIS Model (Rev. B)

SLLM286B.ZIP (104 KB) - IBIS Model
模擬型號

ISO7831F IBIS Model

SLLM288.IBS (243 KB) - IBIS Model
參考設計

PMP20873 — 效率高達 99% 且基於 GaN 的 1kW CCM 圖騰柱功率因數校正 (PFC) 轉換器參考設計

Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage, (...)
Test report: PDF
電路圖: PDF
參考設計

TIDM-1007 — 高效率 GaN CCM 圖騰柱免橋接功率因數校正 (PFC) 參考設計

Interleaved Continuous Conduction Mode (CCM) Totem Pole (TTPL) Bridgeless Power Factor Correction (PFC) is an attractive power topology with use of high band-gap GaN devices, because of high efficiency and reduced size of the power supply. This design illustrates a method to control this power (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDM-02008 — 使用 C2000™ MCU 的雙向高密度 GaN CCM 圖騰柱 PFC

This reference design is a 3.-kW bidirectional interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power factor correction (PFC) power stage using a C2000™ real-time controller and LMG3410R070 gallium nitride (GaN) with integrated driver and protection. (...)
Design guide: PDF
電路圖: PDF
封裝 引腳 下載
SOIC (DW) 16 檢視選項
SOIC (DWW) 16 檢視選項

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