LM74721-Q1
- AEC-Q100 qualified with the following results
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
- 3-V to 65-V input range
- Reverse input protection down to –33 V
- Integrated VDS clamp for Input TVS less operation for ISO7637 pulse suppression
- Low quiescent current 35 µA (max) in operation
- Low 3.3-µA (max) shutdown current (EN = Low)
- Ideal diode operation with 17-mV A to C forward voltage drop regulation
- Drives external back-to-back N-Channel MOSFETs
- Integrated 30-mA boost regulator
- Fast response to reverse current blocking: 0.5 µs
- Active rectification up to 100 kHz
- Adjustable overvoltage protection
- Available in space saving 12-pin WSON package
- Pin-to-pin compatible with LM74720-Q1
The LM74721-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –33-V DC. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. Integrated VDS clamp feature enables input TVS less system designs for automotive ISO7637 pulse suppression. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff protection feature for load dump protection.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM74721-Q1 TVS Less Low IQ Automotive Reverse Battery Protection Ideal Diode Controller with Active Rectification datasheet (Rev. B) | PDF | HTML | 2022/7/7 | ||
| 證書 | LM74721EVM EU RoHS Declaration of Conformity (DoC) | 2022/5/27 | ||||
| 類比設計期刊 | Going TVS-less in Automotive Reverse Battery Protection Designs | PDF | HTML | 2021/11/18 | |||
| 技術文章 | 3 ways to design a low quiescent-current (Iq) automotive reverse battery protectio | PDF | HTML | 2021/11/18 | |||
| 應用說明 | Basics of Ideal Diodes (Rev. B) | PDF | HTML | 2021/10/5 | |||
| Application brief | Active Rectification and its Advantages in Automotive ECU Designs | PDF | HTML | 2021/9/29 | |||
| 類比設計期刊 | Automotive EMC-compliant reverse-battery protection with ideal-diode controllers | 2020/9/22 |
設計與開發
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LM74721EVM — 適用於理想二極體控制器的 LM74721-Q1 評估模組
在反向電池保護應用中，LM74721EVM 評估模組可協助設計人員評估 LM74721-Q1 理想二極體控制器的運作及性能。此評估模組展示 LM74721-Q1 如何搭配用於 IQ 和快速瞬態回應的整合式升壓穩壓器，以及搭配用於無 TVS 運作的整合式輸入 VDS 箝位，控制兩個背對背 N 通道功率 MOSFET，其先連接理想二極體 MOSFET，緊接著再連接用於切換輸出及電源路徑切斷的第二個 MOSFET。
FET-INRUSH-SOA-CALC — FET SOA margin calculator for dvdt based startup
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (DRR) | 12 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。