LMG3100R017
- Integrated 1.7mΩ GaN FET and driver
- Interated high-side level shift and bootstrap
- Two LGM3100 can form a half-bridge
- No external level shifter needed
- 90V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- High slew rate switching with low ringing
- Gate driver capable of up to 10MHz switching
- Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
- Supply rail undervoltage lockout protection
- Excellent propagation delay (29.5ns typical) and matching (12ns typical)
- Low power consumption
- Exposed top QFN package for connection to heatsink
The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.
GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LMG3100R017 100V, 97A GaN FET With Integrated Driver datasheet | PDF | HTML | 2024年 1月 23日 |
Technical article | GaN 可推動電子設計轉型的 4 種中電壓應用 | PDF | HTML | 2024年 2月 20日 |
設計與開發
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LMG3100EVM-089 — LMG3100 評估模組
PMP23392 — 使用 GaN FET 且適用於 48V 汽車應用的雙相位降壓轉換器參考設計
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訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點