LMG3100R017
- Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver
- 100V continuous, 120V pulsed voltage rating
- Interated high-side level shift and bootstrap
- Two LMG3100 can form a half-bridge
- No external level shifter needed
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- High slew rate switching with low ringing
- Gate driver capable of up to 10MHz switching
- Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
- Supply rail undervoltage lockout protection
- Low power consumption
- Package optimized for easy PCB layout
- Exposed top QFN package for top-side cooling
- Large exposed pads at bottom for bottom-side cooling
The LMG3100 device is a 100V continuous, 120V pulsed Gallium Nitride (GaN) FET with integrated driver. Device is offered in two Rds(on) and max current variants, 126A/1.7mΩ for LMG3100R017 and 46A/4.4mΩ for LMG3100R044. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without an additional level shifter.
GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver datasheet (Rev. C) | PDF | HTML | 2025年 3月 6日 |
| Technical article | GaN 可推動電子設計轉型的 4 種中電壓應用 | PDF | HTML | 2024年 2月 20日 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN-FCRLF (VBE) | 15 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點