LMG3526R030
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
- Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
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技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) | PDF | HTML | 2025/1/23 | ||
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | 2026/3/31 | |||
| 技術文章 | GaN 開關整合如何在 PFC 中實現低 THD 與高效率 | PDF | HTML | Download English Version | PDF | HTML | 2024/3/21 | |
| 白皮書 | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 2021/6/2 | |||
| 應用說明 | Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package | 2021/3/5 |
設計與開發
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LMG342X-BB-EVM — LMG342x 評估模組
LMG342X-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG342xR0x0 半橋電路板，例如 LMG3422EVM-043。透過提供功率級、偏壓電源和邏輯電路，此評估模組 (EVM) 可快速測量氮化鎵 (GaN) 裝置切換。此 EVM 能夠提供高達 12A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻運作等)，確保不超過最高操作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。
只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。
LMG3522EVM-042 — 配備整合式驅動器子卡的 LMG3522R030-Q1 車用 650-V 30-mΩ GaN FET
LMG3522EVM-042 可配置半橋中兩個 LMG3522R030 GaN FET，並具備逐週期過電流防護、鎖存短路防護功能和所有必要輔助周邊電路。此 EVM 設計旨在與較大的系統配合使用。
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
PMP40988 — 可變頻率、ZVS、5-kW、GaN 架構、二相圖騰柱 PFC 參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQS) | 52 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。