LMG3425R030
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Ideal diode mode reduces third-quadrant losses
The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG3425R030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet | PDF | HTML | 2024/3/8 | ||
| 白皮書 | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 2021/6/2 | |||
| 白皮書 | 為太陽能電網增添儲能功能的四項 重要設計考量 | Download English Version | 2021/5/5 | |||
| 白皮書 | 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 | Download English Version | 2021/3/18 | |||
| 技術文章 | Get more from your GaN-based digital power designs with a C2000 real-time MCU | PDF | HTML | 2020/12/17 | |||
| 應用說明 | Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A) | PDF | HTML | 2020/11/19 | |||
| 技術文章 | How GaN FETs with integrated drivers and self-protection will enable the next gene | PDF | HTML | 2020/11/17 | |||
| 更多文件說明 | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 2020/10/20 | ||||
| 類比設計期刊 | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 2020/9/22 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG342X-BB-EVM — LMG342x 評估模組
LMG342X-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG342xR0x0 半橋電路板，例如 LMG3422EVM-043。透過提供功率級、偏壓電源和邏輯電路，此評估模組 (EVM) 可快速測量氮化鎵 (GaN) 裝置切換。此 EVM 能夠提供高達 12A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻運作等)，確保不超過最高操作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。
只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。
LMG3425EVM-043 — 具有理想二極體模式半橋子板的 LMG3425R030 600-V 30-mΩ
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQZ) | 54 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。