LMG3422R050
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 3.6MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3426R050 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3427R050 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
The LMG342xR050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG342xR050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R050 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R050 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
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技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG342xR050 600 V 50 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. D) | PDF | HTML | 2025/5/13 | ||
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | 2026/3/31 | |||
| 技術文章 | How motor drive innovations are helping solve robotic movement design challenges | PDF | HTML | 2024/1/5 | |||
| 白皮書 | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 2021/6/2 | |||
| 白皮書 | 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 | Download English Version | 2021/3/18 | |||
| 應用說明 | Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A) | PDF | HTML | 2020/11/19 | |||
| 技術文章 | How GaN FETs with integrated drivers and self-protection will enable the next gene | PDF | HTML | 2020/11/17 | |||
| 更多文件說明 | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 2020/10/20 | ||||
| 類比設計期刊 | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 2020/9/22 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG342X-BB-EVM — LMG342x 評估模組
LMG342X-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG342xR0x0 半橋電路板，例如 LMG3422EVM-043。透過提供功率級、偏壓電源和邏輯電路，此評估模組 (EVM) 可快速測量氮化鎵 (GaN) 裝置切換。此 EVM 能夠提供高達 12A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻運作等)，確保不超過最高操作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。
只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。
LMG3422EVM-041 — LMG3422R050 600-V 50-mΩ 半橋子板
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
PMP41017 — 採用 GaN 和 C2000™ MCU 的 3kW 雙相交錯半橋 LLC 參考設計
此參考設計是使用 LMG3422 及 F280039C 裝置的 3-kW、雙相、交錯式半橋電感器-電感器-電容器 (LLC)。此設計可達到 98.1% 峰值效率與 313 W/in³ 功率密度，可做為常用備援電源供應器 (CRPS) 伺服器電源供應器的輸出階段，可用於評估兩個並聯 LLC 階段的控制方法，例如交叉與電流平衡。
PMP41043 — 由 C2000 和 GaN 實現且具 CCM 圖騰柱 PFC 和電流模式 LLC 的 1.6-kW 參考設計
此參考設計將展示混合磁滯控制 (HHC) 方法，是配備 C2000 F28004x 微控制器的半橋 LLC 階段上之電流模式控制方式。硬體以 TIDA-010062 為基礎，為 1-kW、80 Plus 鈦金屬、GaN CCM 圖騰柱免橋接 PFC 與半橋式 LLC 參考設計。針對混合磁滯控制新增獨立感應卡，可在共振電容器上重新產生電壓。
相較於單迴路電壓模式控制 (VMC) 方法，HHC LLC 階段展示較佳的暫態回應與簡單控制迴路設計。
TIDA-010062 — 1-kW、80+ 鈦金，以及 GaN CCM 圖騰柱免橋接 PFC 和半橋接 LLC 搭配 LFU 參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQZ) | 54 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。