VID TBD-01XE
Radiation - Total Ionizing Dose (TID):
- TID characterized up to 50krad(Si)
- TID performance assurance up to 30krad(Si)
- Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
Radiation - Single-Event Effects (SEE):
- Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
- Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg
Wide operating range of 1.2V to 5.5V
5.5V tolerant input pins
Supports standard pinouts
Up to 150Mbps with 5V or 3.3V VCC
Latch-up performance exceeds 100mA per JESD 78
Space enhanced plastic:
- Supports Defense and Aerospace Applications
- Controlled baseline
- Au bondwire and NiPdAu lead finish
- Meets NASA ASTM E595 outgassing specification
- One fabrication, assembly, and test site
- Extended product life cycle
- Product traceability

VID TBD-01XE
Radiation - Total Ionizing Dose (TID):
- TID characterized up to 50krad(Si)
- TID performance assurance up to 30krad(Si)
- Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
Radiation - Single-Event Effects (SEE):
- Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
- Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg
Wide operating range of 1.2V to 5.5V
5.5V tolerant input pins
Supports standard pinouts
Up to 150Mbps with 5V or 3.3V VCC
Latch-up performance exceeds 100mA per JESD 78
Space enhanced plastic:
- Supports Defense and Aerospace Applications
- Controlled baseline
- Au bondwire and NiPdAu lead finish
- Meets NASA ASTM E595 outgassing specification
- One fabrication, assembly, and test site
- Extended product life cycle
- Product traceability

The SN54SC1G08-SEP device performs the Boolean function or Y = A • B or Y = /A + /B in positive logic.

The CMOS device has high output drive while maintaining low static power dissipation over a broad VCC operating range.

The SN54SC1G08-SEP device performs the Boolean function or Y = A • B or Y = /A + /B in positive logic.

The CMOS device has high output drive while maintaining low static power dissipation over a broad VCC operating range.

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重要文件	類型	標題	格式選項	日期
*	Data sheet	SN54SC1G08-SEP Radiation Tolerant, Single 2-Input Positive-AND Gate datasheet	PDF \| HTML	2025年 7月 15日

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