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TPS7H5020-SP

現行

Radiation-hardened, QML-P, 100% duty cycle PWM controller for driving MOSFETs or GaN FETs

產品詳細資料

Topology Boost, Flyback Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Topology Boost, Flyback Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² (7.8 mm × 6.4 mm)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. E) PDF | HTML 2026/4/15
* 輻射及可靠性報告 TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report 2025/9/3
* 輻射及可靠性報告 TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 2025/9/2
* 輻射及可靠性報告 Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP PDF | HTML 2025/8/18
* SMD TPS7H5020-SP SMD TPS7H5020-SP SMD 5962-24201 2026/7/7
白皮書 IC Sourcing for Space: Pros and Cons of Up-screening COTS Versus Space Enhanced Products (SEP) PDF | HTML 2026/7/28
應用說明 Highly Scalable Space Motor Control Platform based on TI’s Space Enhanced Products (-SEP) and Space Products PDF | HTML 2026/6/8
選擇指南 TI Space Products (Rev. L) 2026/3/27
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
應用說明 QML flow, its importance, and obtaining lot information (Rev. C) 2023/8/30
應用說明 Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
應用說明 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020/8/21
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21

設計與開發

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開發板

TPS7H5020EVM — TPS7H5020-SP 評估模組

TPS7H5020EVM 展示了單一 TPS7H5020-SP 電流模式 PWM 控制器的運作情形,該控制器具有升壓配置中帶有 GaN FET 的整合式閘極驅動器。電路板提供可安裝額外元件的封裝與測試點,以便進行自訂配置測試與效能驗證。
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開發板

TPS7H5020FLYEVM — TPS7H5020-SEP 和 QMLP 返馳評估模組

TPS7H5020FLYEVM 展示了 TPS7H5020-SEP PWM 控制器在返馳轉換器拓樸結構中驅動 GaN FET 開關元件的操作。EVM 提供可測試自訂配置的彈性。提供測試點和額外元件體積,以簡化裝置配置與性能驗證。

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模擬型號

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice 模型
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模擬型號

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS 模型
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參考設計

PMP23598 — 適合航太應用的 75-W 同步順向轉換器參考設計

此參考設計採用耐輻射 TPS7H5020-SEP 脈衝寬度調變 (PWM) 控制器和耐輻射 TPS7H6005-SEP 200V GaN 半橋閘極驅動器,可建立高效率的同步順向拓撲。若要取得準確、直接地感測輸出電壓並達到高迴路頻寬,需將 PWM 控制器置於二次側。半橋式閘極驅動器內的電容隔離 TX 和 RX 位準移位器,可將 PWM 波形從二次側傳輸至主要側,同時維持電氣隔離。

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HTSSOP (PWP) 24 Ultra Librarian

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