首頁 電源管理 AC/DC 和 DC/DC 控制器 (外部 FET)

TPS7H5020-SP

現行

輻射強化、QMLP 100% 占空比 PWM 控制器,適用於驅動 MOSFET 或 GaN FET

產品詳細資料

Rating Space Topology Boost, Flyback Vin (max) (V) 14 Vin (min) (V) 4.5 Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Operating temperature range (°C) -55 to 125 Duty cycle (max) (%) 100
Rating Space Topology Boost, Flyback Vin (max) (V) 14 Vin (min) (V) 4.5 Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Operating temperature range (°C) -55 to 125 Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595

The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

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類型 標題 日期
* Data sheet TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver datasheet (Rev. A) PDF | HTML 2025年 9月 15日
* Radiation & reliability report TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report 2025年 9月 3日
* Radiation & reliability report TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 2025年 9月 2日
* Radiation & reliability report Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP PDF | HTML 2025年 8月 18日
Selection guide TI Space Products (Rev. K) 2025年 4月 4日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS7H5020EVM — TPS7H5020-SP 評估模組

TPS7H5020EVM 展示了單一 TPS7H5020-SP 電流模式 PWM 控制器的運作情形,該控制器具有升壓配置中帶有 GaN FET 的整合式閘極驅動器。電路板提供可安裝額外元件的封裝與測試點,以便進行自訂配置測試與效能驗證。
使用指南: PDF | HTML
TI.com 無法提供
開發板

TPS7H5020FLYEVM — TPS7H5020-SEP 和 QMLP 返馳評估模組

TPS7H5020FLYEVM 展示了 TPS7H5020-SEP PWM 控制器在返馳轉換器拓樸結構中驅動 GaN FET 開關元件的操作。EVM 提供可測試自訂配置的彈性。提供測試點和額外元件體積,以簡化裝置配置與性能驗證。

使用指南: PDF | HTML
TI.com 無法提供
模擬型號

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS Model
模擬型號

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice Model
參考設計

PMP23598 — 適合航太應用的 75-W 同步順向轉換器參考設計

此參考設計採用耐輻射 TPS7H5020-SEP 脈衝寬度調變 (PWM) 控制器和耐輻射 TPS7H6005-SEP 200V GaN 半橋閘極驅動器,可建立高效率的同步順向拓撲。若要取得準確、直接地感測輸出電壓並達到高迴路頻寬,需將 PWM 控制器置於二次側。半橋式閘極驅動器內的電容隔離 TX 和 RX 位準移位器,可將 PWM 波形從二次側傳輸至主要側,同時維持電氣隔離。
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
HTSSOP (PWP) 24 Ultra Librarian

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  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
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