TPS7H5020-SP
- Radiation performance:
- Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 4.5V to 14V input voltage range for both controller and driver stages
- Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
- 1.2A peak source and sink capability at 12V
- Optional connection of VLDO linear regulator output to PVIN for driving GaN
- Programmable linear regulator (VLDO) from 4.5V to 5.5V
- 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
- Switching frequency from 100kHz to 1MHz
- External clock synchronization capability
- Adjustable slope compensation and soft start
- Plastic packages outgas tested per ASTM E595
The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.
The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver datasheet (Rev. A) | PDF | HTML | 2025年 9月 15日 |
| * | Radiation & reliability report | TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report | 2025年 9月 3日 | |
| * | Radiation & reliability report | TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization | 2025年 9月 2日 | |
| * | Radiation & reliability report | Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP | PDF | HTML | 2025年 8月 18日 |
| Selection guide | TI Space Products (Rev. K) | 2025年 4月 4日 |
設計與開發
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TPS7H5020EVM — TPS7H5020-SP 評估模組
TPS7H5020FLYEVM — TPS7H5020-SEP 和 QMLP 返馳評估模組
TPS7H5020FLYEVM 展示了 TPS7H5020-SEP PWM 控制器在返馳轉換器拓樸結構中驅動 GaN FET 開關元件的操作。EVM 提供可測試自訂配置的彈性。提供測試點和額外元件體積,以簡化裝置配置與性能驗證。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (PWP) | 24 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。