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TPS7H5030-SP

現行

Radiation-hardened QMLP, 100% duty cycle PWM controller for driving MOSFETs

產品詳細資料

Topology Boost, Flyback Control mode Peak current mode Features External Sync, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Topology Boost, Flyback Control mode Peak current mode Features External Sync, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

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重要文件 類型 標題 格式選項 日期
* Data sheet TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. E) PDF | HTML 2026年 4月 15日
* Radiation & reliability report TPS7H5030-SP and TPS7H5031-SP Single-Event Effects (SEE) Report PDF | HTML 2026年 5月 20日
* Radiation & reliability report TPS7H5030-SP and TPS7H5030-SEP Neutron Displacement Damage (NDD) Characterization Report (Rev. A) 2026年 5月 18日
* Radiation & reliability report TPS7H5030-QMLP Total Ionizing Dose (TID) Report 2026年 2月 26日
Selection guide TI Space Products (Rev. L) 2026年 3月 27日
Certificate TPS7H5030EVM EU Declaration of Conformity (DoC) 2025年 10月 3日
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025年 6月 17日
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025年 6月 10日
Application note QML flow, its importance, and obtaining lot information (Rev. C) 2023年 8月 30日
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022年 10月 19日
Application note DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020年 8月 21日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

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TPS7H5030EVM — TPS7H5030-SP 評估模組

TPS7H5030EVM 展示了單一 TPS7H5030-SP 電流模式 PWM 控制器的運作情形,該控制器具有升壓配置中的整合式閘極驅動器。電路板提供可安裝額外元件的封裝與測試點,以便進行自訂配置測試與效能驗證。
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