UCC5871-Q1
- Split output driver provides 30-A peak source and 30-A peak sink currents
- Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
- Primary and secondary side active short circuit (ASC) support
- Configurable power transistor protections
- DESAT based short circuit protection
- Shunt resistor based overcurrent and short circuit protection
- NTC based overtemperature protection
- Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
- Functional Safety-Compliant
- Integrated diagnostics:
- Built-in self test (BIST) for protection comparators
- IN+ to transistor gate path integrity
- Power transistor threshold monitoring
- Internal clock monitoring
- Fault alarm (nFLT1) and warning (nFLT2) outputs
- Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
- Advanced high voltage clamping control
- Internal and external supply undervoltage and overvoltage protection
- Active output pulldown and default low outputs with low supply or floating inputs
- Driver die temperature sensing and overtemperature protection
- 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000 V
- SPI based device reconfiguration, verification, supervision, and diagnosis
- Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.
要求更多資訊
UCC5871-Q1 完整產品規格書、功能安全手冊、報告、分析報告及 FIT 率、FMD 和 Pin FMA 報告現已發行。請立即索取
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技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | UCC5871-Q1 30-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications datasheet | PDF | HTML | 2022年 12月 2日 |
White paper | 具備最佳性能的 EV 牽引逆變器設計優先順序 | PDF | HTML | 2022年 9月 27日 | |
White paper | 牽引逆變器 – 車輛電氣化背後的驅動力量 | PDF | HTML | 2022年 8月 17日 | |
Technical article | Reducing power loss and thermal dissipation in SiC traction inverters | PDF | HTML | 2022年 6月 10日 |
設計與開發
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UCC5870QEVM-045 — 符合 UCC5870-Q1 功能安全規範、15-A 絕緣式 IGBT/SiC MOSFET 閘極驅動器三相位 EVM
UCC5870-Q1 三相評估模組 (EVM) 專為評估具進階防護功能的 TI 15-A 隔離式單通道閘極驅動器而設計。此 EVM 的目標在於 EV/HEV 應用中驅動高功率 SiC MOSFET 和 IGBT。此三相 EVM 可用於偵錯驅動器的序列周邊介面 (SPI) 的軟體,並探索驅動器細緻診斷、防護和監控功能。
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDM-02009 — 經 ASIL D 安全概念評估的高速牽引、雙向 DC/DC 轉換參考設計
PMP22817 — 配備整合式變壓器的汽車 SPI 可編程閘極驅動器和偏壓電源參考設計
此參考設計旨在與 UCC14240-Q1 (...)
封裝 | 引腳 | 下載 |
---|---|---|
SSOP (DWJ) | 36 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。