TLV8812 (ACTIVE)

425 nA Precision Nanopower Operational Amplifier for Cost-Optimized Systems (Dual)

425 nA Precision Nanopower Operational Amplifier for Cost-Optimized Systems (Dual) - TLV8812
 

Description

The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively.

Features

  • For Cost-Optimized Systems
  • Nanopower Supply Current: 425 nA/channel
  • Offset Voltage: 500 µV (max)
  • TcVos: 1 µV/°C
  • Gain-Bandwidth: 6 kHz
  • Unity-Gain Stable
  • Low Input Bias Current : 100 fA
  • Wide Supply Range: 1.7 V to 5.5 V
  • Rail-to-Rail Output
  • No Output Reversals
  • EMI Protection
  • Temperature Range: –40°C to 125°C
  • Industry Standard Packages:
    • Single in 5-pin SOT-23
    • Dual in 8-pin VSSOP

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Parametrics Compare all products in Ultra-Low-Power Op Amps (Iq<=10µA)

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
Iq per channel (Max) (mA)
Iq per channel (Typ) (mA)
Vos (Offset Voltage @ 25C) (Max) (mV)
Offset Drift (Typ) (uV/C)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Operating Temperature Range (C)
Package Group
Features
Package Size: mm2:W x L (PKG)
Vn at 1kHz (Typ) (nV/rtHz)
Output Current (Typ) (mA)
Architecture
CMRR (Typ) (dB)
TLV8812 LPV811 TLV8544 TLV8801 TLV8802 TLV8811
2    1    4    1    2    1   
1.7    1.6    1.7    1.7    1.7    1.7   
5.5    5.5    3.6    5.5    5.5    5.5   
0.0007    0.00054    0.00064    0.0007    0.00065    0.00075   
0.000425    0.00045    0.0005    0.00045    0.00032    0.00045   
0.5    0.37    3.1    4.5    4.5    0.55   
1    1    0.8    1    1    1   
0.006    0.008    0.008    0.006    0.006    0.006   
0.0015    0.0017    0.0035    0.0015    0.0015    0.0015   
In to V-
Out   
In to V-
Out   
In
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
-40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125   
VSSOP    SOT-23    SOIC
TSSOP   
SOT-23    VSSOP    SOT-23   
Cost Optimized
EMI Hardened   
EMI Hardened    Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    14SOIC: 52 mm2: 6 x 8.65(SOIC)
14TSSOP: 32 mm2: 6.4 x 5(TSSOP)   
5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)   
450    420    264    450    450    450   
4.7    4.7    15    4.7    4.7    4.7   
CMOS    CMOS      CMOS    CMOS    CMOS   
98    95    75    90    90    95   

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