SLASFA2B November   2024  – October 2025 MSPM0G1518 , MSPM0G1519 , MSPM0G3518 , MSPM0G3519

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Device Comparison Chart
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      11
    3. 6.3 Signal Descriptions
      1.      13
      2.      14
      3.      15
      4.      16
      5.      17
      6.      18
      7.      19
      8.      20
      9.      21
      10.      22
      11.      23
      12.      24
      13.      25
      14.      26
      15.      27
      16.      28
      17.      29
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 Power Supply Ramp
      2. 7.6.2 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 System Phase Lock Loop (SYSPLL)
      4. 7.9.4 Low Frequency Crystal/Clock
      5. 7.9.5 High Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
      4. 7.12.4 Typical Connection Diagram
    13. 7.13 Temperature Sensor
    14. 7.14 VREF
      1. 7.14.1 Voltage Characteristics
      2. 7.14.2 Electrical Characteristics
    15. 7.15 Comparator (COMP)
      1. 7.15.1 Comparator Electrical Characteristics
    16. 7.16 DAC
      1. 7.16.1 DAC_Supply Specifications
      2. 7.16.2 DAC Output Specifications
      3. 7.16.3 DAC Dynamic Specifications
      4. 7.16.4 DAC Linearity Specifications
      5. 7.16.5 DAC Timing Specifications
    17. 7.17 I2C
      1. 7.17.1 I2C Characteristics
      2. 7.17.2 I2C Filter
      3. 7.17.3 I2C Timing Diagram
    18. 7.18 SPI
      1. 7.18.1 SPI
      2. 7.18.2 SPI Timing Diagram
    19. 7.19 UART
    20. 7.20 TIMx
    21. 7.21 TRNG
      1. 7.21.1 TRNG Electrical Characteristics
      2. 7.21.2 TRNG Switching Characteristics
    22. 7.22 Emulation and Debug
      1. 7.22.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Functional Block Diagram
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode (MSPM0Gx51x)
    4. 8.4  Power Management Unit (PMU)
    5. 8.5  Clock Module (CKM)
    6. 8.6  DMA
    7. 8.7  Events
    8. 8.8  Memory
      1. 8.8.1 Memory Organization
      2. 8.8.2 Peripheral File Map
      3. 8.8.3 Peripheral Interrupt Vector
    9. 8.9  Flash Memory
    10. 8.10 SRAM
    11. 8.11 GPIO
    12. 8.12 IOMUX
    13. 8.13 ADC
    14. 8.14 Temperature Sensor
    15. 8.15 VREF
    16. 8.16 COMP
    17. 8.17 DAC
    18. 8.18 Security
    19. 8.19 TRNG
    20. 8.20 AESADV
    21. 8.21 Keystore
    22. 8.22 CRC-P
    23. 8.23 MATHACL
    24. 8.24 UART
    25. 8.25 I2C
    26. 8.26 SPI
    27. 8.27 CAN-FD
    28. 8.28 Low-Frequency Sub System (LFSS)
    29. 8.29 RTC_B
    30. 8.30 IWDT_B
    31. 8.31 WWDT
    32. 8.32 Timers (TIMx)
    33. 8.33 Device Analog Connections
    34. 8.34 Input/Output Diagrams
    35. 8.35 Serial Wire Debug Interface
    36. 8.36 Boot Strap Loader (BSL)
    37. 8.37 Device Factory Constants
    38. 8.38 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tray Information
    2.     PACKAGE OPTION ADDENDUM

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • ZAW|100
  • PM|64
  • RGZ|48
  • RHB|32
  • PN|80
  • PZ|100
  • PT|48
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.10.1  Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High level input voltage ODIO (1) VDD≥1.62V 0.7*VDD 5.5 V
VDD≥2.7V 2 5.5 V
All I/O except ODIO & Reset VDD≥1.62V 0.7*VDD VDD+0.3 V
VIL Low level input voltage ODIO VDD≥1.62V -0.3 0.3*VDD V
VDD≥2.7V -0.3 0.8 V
All I/O except ODIO & Reset VDD≥1.62V -0.3 0.3*VDD V
VHYS Hysteresis ODIO 0.05*VDD V
All I/O except ODIO 0.1*VDD V
Ilkg High-Z leakage current (All packages except PZ, PN, PM) SDIO(2)(3) 1.62V ≤ VDD ≤ 3.6V, -40 °C ≤ Ta ≤ 125 °C 50(4) nA
High-Z leakage current (PZ, PN, PM package) SDIO(2)(3) 1.62V ≤ VDD ≤ 3.6V, -40 °C ≤ Ta ≤ 25 °C 70(4) nA
1.62V ≤ VDD ≤ 3.6V, -40 °C ≤ Ta ≤ 125 °C 400(4) nA
RPU Pull up resistance All I/O except ODIO VIN = VSS 40 kΩ
RPD Pull down resistance VIN = VDD 40 kΩ
CI Input capacitance VDD = 3.3V 5 pF
VOH High level output voltage SDIO VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 VDD-0.4 V
VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 VDD-0.45
HSIO VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 25 °C		 VDD-0.4
VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 125 °C		 VDD-0.45
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 VDD-0.4
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 VDD-0.45
HDIO VDD≥2.7V, DRV=1(5), |IIO|,max=20mA
VDD≥1.71V, DRV=1(5), |IIO|,max=10mA		 VDD-0.4
VDD≥2.7V, DRV=0, |IIO|,max=6mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA		 VDD-0.4
VOL Low level output voltage SDIO VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 0.4 V
VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
HSIO VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 25 °C		 0.4
VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 0.4
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
HDIO VDD≥2.7V, DRV=1(5), |IIO|,max=20mA
VDD≥1.71V, DRV=1(5), |IIO|,max=10mA		 0.4
VDD≥2.7V, DRV=0, |IIO|,max=6mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA		 0.4

ODIO

 VDD≥2.7V, IOL,max=8mA
VDD≥1.71V, IOL,max=4mA
-40 °C ≤ Ta ≤ 25 °C		 0.4
VDD≥2.7V, IOL,max=8mA
VDD≥1.71V, IOL,max=4mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
(1) I/O Types: ODIO = 5V Tolerant Open-Drain , SDIO = Standard-Drive , HSIO = High-Speed, HDIO = High-Drive
(2) The leakage current is measured with VSS or VDD applied to the corresponding pin(s), unless otherwise noted.
(3) The leakage of the digital port pins is measured individually. The port pin is selected for input and the pullup/pulldown resistor is disabled.
(4) This value is for SDIO not muxed with any analog inputs. If the SDIO is muxed with analog inputs then the leakage can be higher. 
(5) When operating a HDIO in DRV=1 high drive strength configuration, a series resistor is necessary to limit the signal slew rate