SBOS527G December   2010  – September 2025 TMP411-Q1 , TMP411D-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics (TMP411-Q1)
    6. 6.6  Electrical Characteristics (TMP411D-Q1)
    7. 6.7  Timing Characteristics
    8. 6.8  Timing Diagrams
    9. 6.9  Typical Characteristics (TMP411-Q1)
    10. 6.10 Typical Characteristics (TMP411D-Q1)
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Series Resistance Cancellation
      2. 7.3.2 Differential Input Capacitance
      3. 7.3.3 Temperature Measurement Data
      4. 7.3.4 THERM (PIN 4) and ALERT/ THERM2 (PIN 6)
      5. 7.3.5 Sensor Fault
      6. 7.3.6 Undervoltage Lockout (TMP411-Q1 Only)
      7. 7.3.7 Filtering
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode (SD)
      2. 7.4.2 One-Shot Conversion
    5. 7.5 Programming
      1. 7.5.1  Serial Interface
      2. 7.5.2  Bus Overview
      3. 7.5.3  Timing Diagrams
      4. 7.5.4  Serial Bus Address
      5. 7.5.5  Read/Write Operations
      6. 7.5.6  Time-Out Function
      7. 7.5.7  High-Speed Mode
      8. 7.5.8  General-Call Reset
      9. 7.5.9  Software Reset
      10. 7.5.10 SMBUS Alert Function
  9. Register Map
    1. 8.1  Register Information
    2. 8.2  Pointer Register
    3. 8.3  Temperature Registers
    4. 8.4  Limit Registers
    5. 8.5  Status Register
    6. 8.6  Configuration Register
    7. 8.7  Resolution Register
    8. 8.8  Conversion Rate Register
    9. 8.9  N-factor Correction Register
    10. 8.10 Minimum and Maximum Registers
    11. 8.11 Consecutive Alert Register
    12. 8.12 THERM Hysteresis Register
    13. 8.13 Identification Registers
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Design Requirements

The TMP411-Q1 and TMP411D-Q1 devices are designed to be used with discrete transistors or substrate transistors built into processor chips and ASICs. NPN or PNP transistors can be used, as long as the base-emitter junction is the remote temperature sensor. A transistor or diode connection can be used, as shown in Figure 7-1. The D+ pin waveform is shown in Figure 9-3 while a transistor is connected between the D+ and D– pins. Due to the three different source currents used in Section 7.2, the D+ waveform has three levels of voltage during temperature conversion.

TMP411-Q1 TMP411D-Q1 D+ Waveform Figure 9-3 D+ Waveform

Errors in remote temperature sensor readings are the result of the ideality factor and current excitation from the TMP411-Q1 and TMP411D-Q1 versus the manufacturer-specified operating current for a given transistor. Some manufacturers specify a high-level and low-level current for the temperature-sensing substrate transistors. The TMP411-Q1 and TMP411D-Q1 have an ILOW value of 6μA, and an IHIGH value of 120μA. The TMP411-Q1 and TMP411D-Q1 allow for different n-factor values, as shown in Table 8-6.

The ideality factor (n) is a measured characteristic of a remote temperature sensor diode compared to an ideal diode. The ideality factor reduces to a value of 1.008. For transistors with an ideality factor that does not match the TMP411-Q1 and TMP411D-Q1, Equation 4 calculates the temperature error. Note that the actual temperature (°C) must be converted to Kelvin (K) for the equation to yield the correct results.

Equation 4. TMP411-Q1 TMP411D-Q1 or T E R R = n a c t u a l   -   n e x p e c t e d n e x p e c t e d × 273.15 + T a c t u a l ֯ C

where:

  • n or nactual = the ideality factor of the remote temperature sensor
  • T(°C) or Tactual(°C) = actual temperature
  • TERR = Treported - Tactual= device reading error due to n or nactual ≠ 1.008
  • Degree delta is the same for °C and K
  • nexpected = 1.008

For n = 1.004 and T(°C) = 100°C, use Equation 5:

Equation 5. TMP411-Q1 TMP411D-Q1

If a discrete transistor is used as the remote temperature sensor, please select the transistor according to the following criteria, which results in the best accuracy.

  1. Base-emitter voltage > 0.25V at 6µA, at the highest sensed temperature.
  2. Base-emitter voltage < 0.95V at 120µA, at the lowest sensed temperature.
  3. Base resistance < 100Ω
  4. Tight control of VBE characteristics is indicated by small variations in hFE (that is, 50 to 150).

Based on these criteria, use two small-signal transistors, such as the 2N3904 (NPN) or 2N3906 (PNP).