SBOS527G December 2010 – September 2025 TMP411-Q1 , TMP411D-Q1
PRODUCTION DATA
The TMP411-Q1 and TMP411D-Q1 devices are designed to be used with discrete transistors or substrate transistors built into processor chips and ASICs. NPN or PNP transistors can be used, as long as the base-emitter junction is the remote temperature sensor. A transistor or diode connection can be used, as shown in Figure 7-1. The D+ pin waveform is shown in Figure 9-3 while a transistor is connected between the D+ and D– pins. Due to the three different source currents used in Section 7.2, the D+ waveform has three levels of voltage during temperature conversion.
Errors in remote temperature sensor readings are the result of the ideality factor and current excitation from the TMP411-Q1 and TMP411D-Q1 versus the manufacturer-specified operating current for a given transistor. Some manufacturers specify a high-level and low-level current for the temperature-sensing substrate transistors. The TMP411-Q1 and TMP411D-Q1 have an ILOW value of 6μA, and an IHIGH value of 120μA. The TMP411-Q1 and TMP411D-Q1 allow for different n-factor values, as shown in Table 8-6.
The ideality factor (n) is a measured characteristic of a remote temperature sensor diode compared to an ideal diode. The ideality factor reduces to a value of 1.008. For transistors with an ideality factor that does not match the TMP411-Q1 and TMP411D-Q1, Equation 4 calculates the temperature error. Note that the actual temperature (°C) must be converted to Kelvin (K) for the equation to yield the correct results.
or
where:
For n = 1.004 and T(°C) = 100°C, use Equation 5:

If a discrete transistor is used as the remote temperature sensor, please select the transistor according to the following criteria, which results in the best accuracy.
Based on these criteria, use two small-signal transistors, such as the 2N3904 (NPN) or 2N3906 (PNP).