SLUAAY0 September   2025 UCC57102 , UCC57102-Q1 , UCC57102Z , UCC57102Z-Q1 , UCC57108 , UCC57108-Q1 , UCC57132 , UCC57132-Q1 , UCC57138 , UCC57138-Q1 , UCC57142 , UCC57142-Q1 , UCC57148 , UCC57148-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2TI Non-Isolated SiC MOSFET Gate Drivers Overview
  6. 3SiC MOSFET Gate Driver Design Considerations
    1. 3.1 Undervoltage Lockout (UVLO)
    2. 3.2 Negative Bias Supply (Bipolar Drive)
    3. 3.3 Short-Circuit Protection
      1. 3.3.1 Desaturation Protection
      2. 3.3.2 Overcurrent Protection
      3. 3.3.3 Soft Turn-Off
  7. 4PFC CCM Boost Low-Side Gate Driver Example
    1. 4.1 Gate Driver Requirements
    2. 4.2 Gate Driver Selection
    3. 4.3 Gate Driver Power Dissipation
  8. 5Summary
  9. 6References

1 Introduction

Silicon Carbide (SiC) power switches are becoming more popular in both industrial and automotive applications due to the support for high switching frequency, high voltage, and high current. SiC MOSFET designs provide a good balance between high frequency and high power applications. Gate drivers play a critical role in controlling SiC MOSFETs effectively, and careful system design of the gate driver is essential for verifying the SiC MOSFET stays within its safe operating area.

Power Switch Technologies and Common Applications Figure 1-1 Power Switch Technologies and Common Applications

This application note discusses Texas Instruments non-isolated low side gate driver products, including design details for features such as undervoltage lockout (UVLO), short-circuit protection, and support for a negative bias supply. A gate driver design example is presented for a power factor correction (PFC) continuous conduction mode (CCM) boost topology. The gate driver requirements are discussed with respect to max supply voltage (VDD) rating, peak current capability, UVLO threshold, short-circuit protection design, external gate drive resistor, and power dissipation.