SLUAAY0 September   2025 UCC57102 , UCC57102-Q1 , UCC57102Z , UCC57102Z-Q1 , UCC57108 , UCC57108-Q1 , UCC57132 , UCC57132-Q1 , UCC57138 , UCC57138-Q1 , UCC57142 , UCC57142-Q1 , UCC57148 , UCC57148-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2TI Non-Isolated SiC MOSFET Gate Drivers Overview
  6. 3SiC MOSFET Gate Driver Design Considerations
    1. 3.1 Undervoltage Lockout (UVLO)
    2. 3.2 Negative Bias Supply (Bipolar Drive)
    3. 3.3 Short-Circuit Protection
      1. 3.3.1 Desaturation Protection
      2. 3.3.2 Overcurrent Protection
      3. 3.3.3 Soft Turn-Off
  7. 4PFC CCM Boost Low-Side Gate Driver Example
    1. 4.1 Gate Driver Requirements
    2. 4.2 Gate Driver Selection
    3. 4.3 Gate Driver Power Dissipation
  8. 5Summary
  9. 6References

Abstract

The need for higher power density in smaller form factors has increased the prevalence of wide-bandgap semiconductor technologies like silicon carbide (SiC). These switches have traditionally been used in higher power (>10kW) designs often requiring isolated gate drivers, particularly in electric vehicles and charging stations. As SiC technology continues to scale, there are increasing numbers of industrial customers considering SiC technology for lower power, non-isolated applications. This application note outlines the Texas Instruments (TI) portfolio of non-isolated low-side gate drivers for SiC MOSFETs, including key considerations for proper system design, and a power factor correction (PFC) design example.