SLUAAY0 September   2025 UCC57102 , UCC57102-Q1 , UCC57102Z , UCC57102Z-Q1 , UCC57108 , UCC57108-Q1 , UCC57132 , UCC57132-Q1 , UCC57138 , UCC57138-Q1 , UCC57142 , UCC57142-Q1 , UCC57148 , UCC57148-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2TI Non-Isolated SiC MOSFET Gate Drivers Overview
  6. 3SiC MOSFET Gate Driver Design Considerations
    1. 3.1 Undervoltage Lockout (UVLO)
    2. 3.2 Negative Bias Supply (Bipolar Drive)
    3. 3.3 Short-Circuit Protection
      1. 3.3.1 Desaturation Protection
      2. 3.3.2 Overcurrent Protection
      3. 3.3.3 Soft Turn-Off
  7. 4PFC CCM Boost Low-Side Gate Driver Example
    1. 4.1 Gate Driver Requirements
    2. 4.2 Gate Driver Selection
    3. 4.3 Gate Driver Power Dissipation
  8. 5Summary
  9. 6References

5 Summary

This application note articulates the non-isolated low side gate driver designs from Texas Instruments (TI) for Silicon Carbide (SiC) switches. TI gate drivers can control SiC power switches with the necessary protection features required, enabling higher power density and smaller form factor designs in industrial and automotive systems.