SLUAAY0 September 2025 UCC57102 , UCC57102-Q1 , UCC57102Z , UCC57102Z-Q1 , UCC57108 , UCC57108-Q1 , UCC57132 , UCC57132-Q1 , UCC57138 , UCC57138-Q1 , UCC57142 , UCC57142-Q1 , UCC57148 , UCC57148-Q1
In a power factor correction (PFC) continuous conduction mode (CCM) boost application, SiC MOSFETs can offer substantial benefits. The low conduction and switching losses in SiC MOSFETs enable higher efficiency and increased power density for applications above 1kW. Higher switching frequencies can be realized with SiC technology, contributing to magnetics size and cost reduction opportunities. In this example, this application note outlines the low side gate driver considerations for a 3kW PFC CCM boost. Target design parameters are outlined in Table 4-1.
| DESIGN PARAMETER | EXAMPLE VALUE |
|---|---|
| PFC Input Voltage Range | 185-265Vac, 60Hz |
| PFC Nominal Output Voltage | 400VDC |
| Maximum Steady-State Output Power | 3000W |
| SiC MOSFET Positive Bias Supply | +20V |
| SiC MOSFET Negative Bias Supply | -5V |
| Switching Frequency | 60kHz |
| Switching Slew Rate | 20V/ns |
| Short-circuit Detection | Yes |
| Maximum Ambient Temperature | 100°C |
In this example the chosen SiC MOSFET has ratings as follows: 650V maximum VDS, 35A continuous ID rating (at Tc = 100C), total QG of 73nC, and 45mΩ typical RDS(on) at VGS = 20V. Figure 4-1 shows the components needed for a typical PFC CCM boost application.