SLUSFB5A June   2024  – April 2025 BQ41Z50

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1. 4.1 Pin Equivalent Diagrams
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Supply Current
    6. 5.6  Power Supply Control
    7. 5.7  Low Dropout Regulators
    8. 5.8  Internal Oscillators
    9. 5.9  Voltage References
    10. 5.10 Current Wake Detector
    11. 5.11 VC0, VC1, VC2, VC3, VC4, PACK
    12. 5.12 Cell Balancing Support
    13. 5.13 SMBD, SMBC
    14. 5.14 PRES/SHUTDN, DISP
    15. 5.15 ALERT
    16. 5.16 LEDCNTLA, LEDCNTLB, LEDCNTLC
    17. 5.17 Coulomb Counter
    18. 5.18 Coulomb Counter Digital Filter (CC1)
    19. 5.19 Current Measurement Digital Filter (CC2)
    20. 5.20 Analog-to-Digital Converter
    21. 5.21 ADC Digital Filter
    22. 5.22 CHG, DSG High-side NFET Drivers
    23. 5.23 Precharge (PCHG) FET Drive
    24. 5.24 FUSE Drive
    25. 5.25 Internal Temperature Sensor
    26. 5.26 TS1, TS2, TS3, TS4
    27. 5.27 Flash Memory
    28. 5.28 OT, SCD, OCC, OCD1, OCD2 Protection Thresholds (SCOMP)
    29. 5.29 OT, SCD, OCC, OCD1, OCD2 Protection Timing (SCOMP)
    30. 5.30 GPIO1, GPIO2, GPIO3, GPIO4, GPIO5, GPIO6, GPIO7
    31. 5.31 Elliptical Curve Cryptography (ECC)
    32. 5.32 SMBus Interface Timing
    33. 5.33 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Primary (1st Level) Safety Features
      2. 6.3.2 Secondary (2nd Level) Safety Features
      3. 6.3.3 Charge Control Features
      4. 6.3.4 Gas Gauging
      5. 6.3.5 Lifetime Data Logging Features
      6. 6.3.6 Authentication
      7. 6.3.7 Configuration
        1. 6.3.7.1 Oscillator Function
        2. 6.3.7.2 Real Time Clock
        3. 6.3.7.3 System Present Operation
        4. 6.3.7.4 Emergency Shutdown
        5. 6.3.7.5 2-Series, 3-Series, or 4-Series Cell Configuration
        6. 6.3.7.6 Cell Balancing
        7. 6.3.7.7 LED Display
      8. 6.3.8 Battery Parameter Measurements
        1. 6.3.8.1 Charge and Discharge Counting
        2. 6.3.8.2 Voltage
        3. 6.3.8.3 Current
        4. 6.3.8.4 Temperature
        5. 6.3.8.5 Communications
          1. 6.3.8.5.1 SMBus On and Off State
          2. 6.3.8.5.2 SBS Commands
    4. 6.4 Device Functional Modes
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 High-Current Path
          1. 7.2.2.1.1 Protection FETs
          2. 7.2.2.1.2 Chemical Fuse
          3. 7.2.2.1.3 Lithium-Ion Cell Connections
          4. 7.2.2.1.4 Sense Resistor
          5. 7.2.2.1.5 ESD Mitigation
        2. 7.2.2.2 Gas Gauge Circuit
          1. 7.2.2.2.1 Coulomb-Counting Interface
          2. 7.2.2.2.2 Low-dropout Regulators (LDOs)
            1. 7.2.2.2.2.1 REG18
            2. 7.2.2.2.2.2 REG135
          3. 7.2.2.2.3 System Present
          4. 7.2.2.2.4 SMBus Communication
          5. 7.2.2.2.5 FUSE Circuitry
        3. 7.2.2.3 Secondary-Current Protection
          1. 7.2.2.3.1 Cell and Battery Inputs
          2. 7.2.2.3.2 External Cell Balancing
          3. 7.2.2.3.3 PACK and FET Control
          4. 7.2.2.3.4 Temperature Measurement
          5. 7.2.2.3.5 LEDs
      3. 7.2.3 Application Curves
    3. 7.3 Configuring Device Firmware
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Protector FET Bypass and Pack Terminal Bypass Capacitors
      2. 9.1.2 ESD Spark Gap
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

5.10 Current Wake Detector

Typical values stated where TA = 25°C and VBAT = 14.4V, Min/Max values stated where TA = –40°C to 85°C and VBAT = 3.0V to 28V (unless otherwise noted)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VWAKE_CD Wake voltage in discharge threshold Nominal settings, threshold based on VSRP - VSRN -7.5 -4.5 -0.5 mV
ΔVWAKE_CD Wake voltage in discharge threshold program step VWAKE_CD = VSRP - VSRN -0.5 mV
VWAKE_CC Wake voltage in charge threshold Nominal settings, threshold based on VSRP - VSRN 0.5 4.5 7.5 mV
ΔVWAKE_CC Wake voltage in charge threshold program step VWAKE_CC = VSRP - VSRN 0.5 mV
VWAKE_Cx_ERR(1) Wakeup voltage threshold error TA = 25°C, All VWAKE_Cx settings, VWAKE = VSRP – VSRN –350 350 µV
tWAKE_CD (1)(3) Current wake in discharge detection delay time tWAKE_CD = (13 + OCD Wake Delay(4)) × 0.55 ms 1.1 288.2 ms
tWAKE_CC (1)(3) Current wake in charge detection delay time tWAKE_CC = (13 + OCC Wake Delay(4)) × 0.55 ms 1.1 288.2 ms
(1) Specified by design. Not production tested
(2) The current wake feature utilizes the hardware fault detection (SCOMP) module for detecting a voltage between SRP and SRN
(3) Not including LFO frequency error
(4) Firmware-based parameter. The data flash configuration value can be changed in FULL ACCESS mode and is locked in SEALED mode. Refer to the BQ41Z50 Technical Reference Manual.