SLVSIM8A June   2025  – December 2025 DRV8363-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Functions 48-Pin DRV8363-Q1
  6. 5 Specification
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information 1pkg
    4. 5.4 Electrical Characteristics
    5. 5.5 SPI Timing Requirements
    6. 5.6 SPI Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Three BLDC Gate Drivers
        1. 6.3.1.1 PWM Control Modes
          1. 6.3.1.1.1 6x PWM Mode
          2. 6.3.1.1.2 3x PWM Mode with INLx enable control
          3. 6.3.1.1.3 1x PWM Mode
        2. 6.3.1.2 Gate Drive Architecture
          1. 6.3.1.2.1 Bootstrap diode
          2. 6.3.1.2.2 VCP Trickle Charge pump
          3. 6.3.1.2.3 Gate Driver Output
          4. 6.3.1.2.4 Passive and Semi-active pull-down resistor
          5. 6.3.1.2.5 TDRIVE/IDRIVE Gate Drive Timing Control
          6. 6.3.1.2.6 Propagation Delay
          7. 6.3.1.2.7 Deadtime and Cross-Conduction Prevention
      2. 6.3.2 DVDD Linear Voltage Regulator
      3. 6.3.3 Low-Side Current Sense Amplifiers
        1. 6.3.3.1 Unidirectional Current Sense Operation
        2. 6.3.3.2 Bidirectional Current Sense Operation
      4. 6.3.4 Gate Driver Shutdown
        1. 6.3.4.1 DRVOFF Gate Driver Shutdown
        2. 6.3.4.2 Soft Shutdown Timing Sequence
      5. 6.3.5 Active Short Circuit
      6. 6.3.6 Gate Driver Protective Circuits
        1. 6.3.6.1  GVDD Undervoltage Lockout (GVDD_UV)
        2. 6.3.6.2  GVDD Overvoltage Fault (GVDD_OV)
        3. 6.3.6.3  VDRAIN Undervoltage Fault (VDRAIN_UV)
        4. 6.3.6.4  VDRAIN Overvoltage Fault (VDRAIN_OV)
        5. 6.3.6.5  VCP Undervoltage Fault (CP_OV)
        6. 6.3.6.6  BST Undervoltage Lockout (BST_UV)
        7. 6.3.6.7  MOSFET VDS Overcurrent Protection (VDS_OCP)
        8. 6.3.6.8  MOSFET VGS Monitoring Protection
        9. 6.3.6.9  Shunt Overcurrent Protection (SNS_OCP)
        10. 6.3.6.10 Thermal Shutdown (OTSD)
        11. 6.3.6.11 Thermal Warning (OTW)
        12. 6.3.6.12 OTP CRC
        13. 6.3.6.13 SPI Watchdog Timer
        14. 6.3.6.14 Phase Diagnostic
    4. 6.4 Fault Detection and Response Summary Table (Fault Table)
    5. 6.5 Device Functional Modes
      1. 6.5.1 Gate Driver Functional Modes
        1. 6.5.1.1 Sleep Mode
        2. 6.5.1.2 Standby Mode
        3. 6.5.1.3 Active Mode
    6. 6.6 Programming
      1. 6.6.1 SPI
      2. 6.6.2 SPI Format
      3. 6.6.3 SPI Format Diagrams
    7. 6.7 Register Maps
      1. 6.7.1 STATUS Registers
      2. 6.7.2 CONTROL Registers
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Typical Application with 48-pin package
        1. 7.2.1.1 External Components
      2. 7.2.2 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 10.1 Tape and Reel Information

6.1 Overview

The DRV8363-Q1 is an integrated 8V to 85V gate driver for three-phase motor drive applications. These devices decrease system component count, cost, and complexity by integrating three independent half-bridge gate drivers, a trickle charge pump, and a linear regulator for the supply of a low power microcontroller. The device also integrates up to three current shunt (or current sense) amplifiers. A standard serial peripheral interface (SPI) provides a simple method for configuring the various device settings and reading fault diagnostic information through an external controller.

The gate drivers support external N-channel high-side and low-side power MOSFETs and can drive up to 1-A source, and 2A sink peak currents. A bootstrap capacitor generates the supply voltage of the high-side gate drive. The supply voltage of the low-side gate driver is supplied externally at a nominal 12V.

A Smart Gate Drive architecture provides the ability to dynamically adjust the strength of the gate drive output current which lets the gate driver control the VDS switching speed of the power MOSFET. This feature lets the user remove the external gate drive resistors and diodes, reducing the component count in the bill of materials (BOM), cost, and area of the printed circuit board (PCB). The architecture also uses an internal state machine to protect against short-circuit events in the gate driver, control the half-bridge dead time, and protect against dV/dt parasitic turn on of the external power MOSFET.

The DRV8363-Q1 integrates current sense amplifiers for monitoring current level through all the external half-bridges using a low-side shunt resistor. The gain setting of the current sense amplifier can be adjusted through SPI commands.

In addition to the high level of device integration, the DRV8363-Q1 provides a wide range of integrated protection features. These features include power supply undervoltage/overvoltage monitoring (GVDD UV/OV), drain supply undervoltage/overvoltage monitoring (VDRAIN UV/OV), VDS overcurrent monitoring, RSENSE over current monitoring (SNS_OCP), and overtemperature monitoring/shutdown (OTW and OTSD). Fault events are indicated by the nFAULT pin.