SLVSIM8A June   2025  – December 2025 DRV8363-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Functions 48-Pin DRV8363-Q1
  6. Specification
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information 1pkg
    4. 5.4 Electrical Characteristics
    5. 5.5 SPI Timing Requirements
    6. 5.6 SPI Timing Diagrams
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Three BLDC Gate Drivers
        1. 6.3.1.1 PWM Control Modes
          1. 6.3.1.1.1 6x PWM Mode
          2. 6.3.1.1.2 3x PWM Mode with INLx enable control
          3. 6.3.1.1.3 1x PWM Mode
        2. 6.3.1.2 Gate Drive Architecture
          1. 6.3.1.2.1 Bootstrap diode
          2. 6.3.1.2.2 VCP Trickle Charge pump
          3. 6.3.1.2.3 Gate Driver Output
          4. 6.3.1.2.4 Passive and Semi-active pull-down resistor
          5. 6.3.1.2.5 TDRIVE/IDRIVE Gate Drive Timing Control
          6. 6.3.1.2.6 Propagation Delay
          7. 6.3.1.2.7 Deadtime and Cross-Conduction Prevention
      2. 6.3.2 DVDD Linear Voltage Regulator
      3. 6.3.3 Low-Side Current Sense Amplifiers
        1. 6.3.3.1 Unidirectional Current Sense Operation
        2. 6.3.3.2 Bidirectional Current Sense Operation
      4. 6.3.4 Gate Driver Shutdown
        1. 6.3.4.1 DRVOFF Gate Driver Shutdown
        2. 6.3.4.2 Soft Shutdown Timing Sequence
      5. 6.3.5 Active Short Circuit
      6. 6.3.6 Gate Driver Protective Circuits
        1. 6.3.6.1  GVDD Undervoltage Lockout (GVDD_UV)
        2. 6.3.6.2  GVDD Overvoltage Fault (GVDD_OV)
        3. 6.3.6.3  VDRAIN Undervoltage Fault (VDRAIN_UV)
        4. 6.3.6.4  VDRAIN Overvoltage Fault (VDRAIN_OV)
        5. 6.3.6.5  VCP Undervoltage Fault (CP_OV)
        6. 6.3.6.6  BST Undervoltage Lockout (BST_UV)
        7. 6.3.6.7  MOSFET VDS Overcurrent Protection (VDS_OCP)
        8. 6.3.6.8  MOSFET VGS Monitoring Protection
        9. 6.3.6.9  Shunt Overcurrent Protection (SNS_OCP)
        10. 6.3.6.10 Thermal Shutdown (OTSD)
        11. 6.3.6.11 Thermal Warning (OTW)
        12. 6.3.6.12 OTP CRC
        13. 6.3.6.13 SPI Watchdog Timer
        14. 6.3.6.14 Phase Diagnostic
    4. 6.4 Fault Detection and Response Summary Table (Fault Table)
    5. 6.5 Device Functional Modes
      1. 6.5.1 Gate Driver Functional Modes
        1. 6.5.1.1 Sleep Mode
        2. 6.5.1.2 Standby Mode
        3. 6.5.1.3 Active Mode
    6. 6.6 Programming
      1. 6.6.1 SPI
      2. 6.6.2 SPI Format
      3. 6.6.3 SPI Format Diagrams
    7. 6.7 Register Maps
      1. 6.7.1 STATUS Registers
      2. 6.7.2 CONTROL Registers
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Typical Application with 48-pin package
        1. 7.2.1.1 External Components
      2. 7.2.2 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 10.1 Tape and Reel Information

MOSFET VGS Monitoring Protection

The DRV8363-Q1 utilizes integrated gate to source voltage (VGS) monitors to monitor the state of the external MOSFETs. When the output state of the MOSFETs is commanded OFF (INxx = low), the monitor verifies that the output turns off and stays off. If at any point the VGS voltage exceeds the VGS threshold for a duration longer than tvgs_dg, the nFAULT pin is driven low and the VGS_XX flag is set for the corresponding output channel. When the output state of the MOSFETs is commanded ON (INxx = high), the monitor verifies that the output turns on. If at any point the VGS drops below the VGS threshold for a duration longer than tvgs_dg, the nFAULT pin is driven low and the VGS_XX flag is set for the corresponding output channel. The VGS monitor blanking time is shared with the VDS monitor can be adjusted through the VDS_VGS_BLK register field. TI recommends to set this value based on the expected switching time for the external MOSFETs. The VGS monitor deglitch time can be adjusted through the VGS_DEG register field. The deglitch timer does not start until after the blanking time has elapsed following a rising/falling PWM signal. TI recommends to set this value based on the system noise level and acceptable fault tolerance timing.

DRV8363-Q1 DRV8363-Q1
                        VGS Monitors Figure 6-19 DRV8363-Q1 VGS Monitors