SLVSIM8A June   2025  – December 2025 DRV8363-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Functions 48-Pin DRV8363-Q1
  6. 5 Specification
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information 1pkg
    4. 5.4 Electrical Characteristics
    5. 5.5 SPI Timing Requirements
    6. 5.6 SPI Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Three BLDC Gate Drivers
        1. 6.3.1.1 PWM Control Modes
          1. 6.3.1.1.1 6x PWM Mode
          2. 6.3.1.1.2 3x PWM Mode with INLx enable control
          3. 6.3.1.1.3 1x PWM Mode
        2. 6.3.1.2 Gate Drive Architecture
          1. 6.3.1.2.1 Bootstrap diode
          2. 6.3.1.2.2 VCP Trickle Charge pump
          3. 6.3.1.2.3 Gate Driver Output
          4. 6.3.1.2.4 Passive and Semi-active pull-down resistor
          5. 6.3.1.2.5 TDRIVE/IDRIVE Gate Drive Timing Control
          6. 6.3.1.2.6 Propagation Delay
          7. 6.3.1.2.7 Deadtime and Cross-Conduction Prevention
      2. 6.3.2 DVDD Linear Voltage Regulator
      3. 6.3.3 Low-Side Current Sense Amplifiers
        1. 6.3.3.1 Unidirectional Current Sense Operation
        2. 6.3.3.2 Bidirectional Current Sense Operation
      4. 6.3.4 Gate Driver Shutdown
        1. 6.3.4.1 DRVOFF Gate Driver Shutdown
        2. 6.3.4.2 Soft Shutdown Timing Sequence
      5. 6.3.5 Active Short Circuit
      6. 6.3.6 Gate Driver Protective Circuits
        1. 6.3.6.1  GVDD Undervoltage Lockout (GVDD_UV)
        2. 6.3.6.2  GVDD Overvoltage Fault (GVDD_OV)
        3. 6.3.6.3  VDRAIN Undervoltage Fault (VDRAIN_UV)
        4. 6.3.6.4  VDRAIN Overvoltage Fault (VDRAIN_OV)
        5. 6.3.6.5  VCP Undervoltage Fault (CP_OV)
        6. 6.3.6.6  BST Undervoltage Lockout (BST_UV)
        7. 6.3.6.7  MOSFET VDS Overcurrent Protection (VDS_OCP)
        8. 6.3.6.8  MOSFET VGS Monitoring Protection
        9. 6.3.6.9  Shunt Overcurrent Protection (SNS_OCP)
        10. 6.3.6.10 Thermal Shutdown (OTSD)
        11. 6.3.6.11 Thermal Warning (OTW)
        12. 6.3.6.12 OTP CRC
        13. 6.3.6.13 SPI Watchdog Timer
        14. 6.3.6.14 Phase Diagnostic
    4. 6.4 Fault Detection and Response Summary Table (Fault Table)
    5. 6.5 Device Functional Modes
      1. 6.5.1 Gate Driver Functional Modes
        1. 6.5.1.1 Sleep Mode
        2. 6.5.1.2 Standby Mode
        3. 6.5.1.3 Active Mode
    6. 6.6 Programming
      1. 6.6.1 SPI
      2. 6.6.2 SPI Format
      3. 6.6.3 SPI Format Diagrams
    7. 6.7 Register Maps
      1. 6.7.1 STATUS Registers
      2. 6.7.2 CONTROL Registers
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Typical Application with 48-pin package
        1. 7.2.1.1 External Components
      2. 7.2.2 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 10.1 Tape and Reel Information
6.3.1.2.1 Bootstrap diode

The bootstrap diode is necessary to generate the high-side bias and is included in the driver device. The diode anode is connected to GVDD through an internal resistor and cathode connected to BSTx. With the CBST capacitor connected to BSTx and the SHx pins, the CBST capacitor charge is refreshed every switching cycle when SHx transitions to ground. The capacitor value CBST is dependent on the gate charge of the high-side MOSFET and must be selected considering PWM control and voltage drop of the MOSFET gate. The boot diode provides fast recovery times, low diode resistance, and voltage rating margin to allow for efficient and reliable operation.