SPRAD06C March   2022  – March 2025 AM620-Q1 , AM623 , AM625 , AM625-Q1 , AM62L

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
    1. 1.1 Board Designs Supported
    2. 1.2 General Board Layout Guidelines
    3. 1.3 PCB Stack-Up
    4. 1.4 Bypass Capacitors
      1. 1.4.1 Bulk Bypass Capacitors
      2. 1.4.2 High-Speed Bypass Capacitors
      3. 1.4.3 Return Current Bypass Capacitors
    5. 1.5 Velocity Compensation
  5. 2DDR4 Board Design and Layout Guidance
    1. 2.1  DDR4 Introduction
    2. 2.2  DDR4 Device Implementations Supported
    3. 2.3  DDR4 Interface Schematics
      1. 2.3.1 DDR4 Implementation Using 16-Bit SDRAM Devices
      2. 2.3.2 DDR4 Implementation Using 8-Bit SDRAM Devices
    4. 2.4  Compatible JEDEC DDR4 Devices
    5. 2.5  Placement
    6. 2.6  DDR4 Keepout Region
    7. 2.7  DBI
    8. 2.8  VPP
    9. 2.9  Net Classes
    10. 2.10 DDR4 Signal Termination
    11. 2.11 VREF Routing
    12. 2.12 VTT
    13. 2.13 POD Interconnect
    14. 2.14 CK and ADDR_CTRL Topologies and Routing Guidance
    15. 2.15 Data Group Topologies and Routing Guidance
    16. 2.16 CK and ADDR_CTRL Routing Specification
      1. 2.16.1 CACLM - Clock Address Control Longest Manhattan Distance
      2. 2.16.2 CK and ADDR_CTRL Routing Limits
    17. 2.17 Data Group Routing Specification
      1. 2.17.1 DQLM - DQ Longest Manhattan Distance
      2. 2.17.2 Data Group Routing Limits
    18. 2.18 Bit Swapping
      1. 2.18.1 Data Bit Swapping
      2. 2.18.2 Address and Control Bit Swapping
  6. 3LPDDR4 Board Design and Layout Guidance
    1. 3.1  LPDDR4 Introduction
    2. 3.2  LPDDR4 Device Implementations Supported
    3. 3.3  LPDDR4 Interface Schematics
    4. 3.4  Compatible JEDEC LPDDR4 Devices
    5. 3.5  Placement
    6. 3.6  LPDDR4 Keepout Region
    7. 3.7  LPDDR4 DBI
    8. 3.8  Net Classes
    9. 3.9  LPDDR4 Signal Termination
    10. 3.10 LPDDR4 VREF Routing
    11. 3.11 LPDDR4 VTT
    12. 3.12 CK0 and ADDR_CTRL Topologies
    13. 3.13 Data Group Topologies
    14. 3.14 CK0 and ADDR_CTRL Routing Specification
    15. 3.15 Data Group Routing Specification
    16. 3.16 Byte and Bit Swapping
  7. 4LPDDR4 Board Design Simulations
    1. 4.1 Board Model Extraction
    2. 4.2 Board-Model Validation
    3. 4.3 S-Parameter Inspection
    4. 4.4 Time Domain Reflectometry (TDR) Analysis
    5. 4.5 System Level Simulation
      1. 4.5.1 Simulation Setup
      2. 4.5.2 Simulation Parameters
      3. 4.5.3 Simulation Targets
        1. 4.5.3.1 Eye Quality
        2. 4.5.3.2 Delay Report
        3. 4.5.3.3 Mask Report
    6. 4.6 Design Example
      1. 4.6.1 Stack-Up
      2. 4.6.2 Routing
      3. 4.6.3 Model Verification
      4. 4.6.4 Simulation Results
  8. 5Additional Information: Package Delays
  9. 6Summary
  10. 7References
  11. 8Revision History

2.13 POD Interconnect

Prior to DDR4, the output buffers were push-pull CMOS buffers. The buffers sink current when driving low and source current when driving high. The buffers were then terminated to a mid-level Thevenin resistance to obtain optimum power transfer and signal integrity. Unfortunately, this resulted in current flowing, and power being dissipated, whenever the buffers were enabled at either high or low. Pseudo Open Drain (POD) is a connection type where the termination at the load, ODT, is only connected to VDDQ. POD connections only consume power when driving low, thus reducing power. In DDR4, both the PHY (for reads) and SDRAM (for writes) provide these terminations to VDDQ internally on all of the data group pins.

Signals look different on connections using POD terminations as compared to previous DDR connections, where the data group signals went from VSS to VDDQ and sampling was based on a mid-level reference voltage. The high level is still at VDDQ. However, the low level is now calculated based on the drive impedance and the ODT resistance. If the drive impedance and the ODT resistance are both set to 50Ω, then the low-level voltage is now at VDDQ/2. Then, that requires a sampling voltage halfway between those voltages, or 3/4*VDDQ, for best performance.