TIDUF68A February   2024  – March 2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 LMG2100
      2. 2.3.2 INA241A
      3. 2.3.3 AMC0106M05
      4. 2.3.4 LMR38010
  9. 3System Design Theory
    1. 3.1 Three-Phase GaN Inverter Power Stage
      1. 3.1.1 LMG2100 GaN Half-Bridge Power Stage
    2. 3.2 Inline Shunt Precision Phase-Current Sensing
      1. 3.2.1 INA241A Ultra-Precise Current Sense Amplifier with Enhanced PWM Rejection
      2. 3.2.2 AMC0106M05 Precision, ±50mV Input, Functionally Isolated, Delta-Sigma Modulator
    3. 3.3 Phase Voltage and DC Input Voltage Sensing
    4. 3.4 Power-Stage PCB Temperature Monitor
    5. 3.5 Power Management
      1. 3.5.1 48V to 5V DC/DC Converter
      2. 3.5.2 5V to 3.3V Rail
    6. 3.6 Interface to Host MCU
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
      1. 4.1.1 TIDA-010936 PCB Overview
      2. 4.1.2 TIDA-010936 Jumper Settings
      3. 4.1.3 Interface to C2000™ MCU LaunchPad™ Development Kit
    2. 4.2 Software Requirements
    3. 4.3 Test Setup
    4. 4.4 Test Results
      1. 4.4.1 Power Management and System Power Up and Power Down
      2. 4.4.2 GaN Inverter Half-Bridge Module Switch Node Voltage
        1. 4.4.2.1 Switch Node Voltage Transient Response at 48V DC Bus
          1. 4.4.2.1.1 Output Current at ±1A
          2. 4.4.2.1.2 Output Current at ±10A
        2. 4.4.2.2 Impact of PWM Frequency to DC-Bus Voltage Ripple
        3. 4.4.2.3 Efficiency Measurements
        4. 4.4.2.4 Thermal Analysis
        5. 4.4.2.5 No Load Loss Test (COSS Losses)
      3. 4.4.3 Phase-Current Sensing
  11. 5Design and Documentation Support
    1. 5.1 Design Files [Required Topic]
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
      3. 5.1.3 PCB Layout Recommendations
        1. 5.1.3.1 Layout Prints
      4. 5.1.4 Altium Project
      5. 5.1.5 Gerber Files
      6. 5.1.6 Assembly Drawings
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Recognition
  14. 8Revision History

4.4.2.4 Thermal Analysis

The thermal analysis of the design was done at 27°C lab temperature with 48V DC input with 40kHz with the high-power motor driven. For this test neither a heat sink or a fan were used.


TIDA-010936 Thermal Picture of TIDA-010936 at 15.6ARMS at 40kHz PWM

Figure 4-24 Thermal Picture of TIDA-010936 at 15.6ARMS at 40kHz PWM

Since LMG2100 has exposed dies on top, the case temperature of LMG2100 can be very close to the temperature of the die. The recommended junction temperature is up to 125°C. In this test the GaN device achieved 117°C with 15.6ARMS phase current.


TIDA-010936 Thermal Picture of TIDA-010936 at 10ARMS at 60kHz PWM and 40kHz and 80kHz

Figure 4-25 Thermal Picture of TIDA-010936 at 10ARMS at 60kHz PWM and 40kHz and 80kHz

With 60kHz PWM and 10ARMS output current, all three-phase GaN has 60°C case temperature. At 40kHz and 80kHz there is almost no difference of case temperature with 10A output.