TIDUFB3 July 2025
The TPS7H6025-SEP is a radiation-tolerant GaN FET gate driver which is designed for high-frequency, high-efficiency, and high-current applications. The TPS7H6025-SEP is part of the TPS7H60x5 series of gate drivers which consists of the TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). The drivers feature adjustable dead-time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs, which provide a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
The TPS7H6025-SEP is used in this design to drive the GaN FETs which are part of the buck regulator for the high-current, VCCINT rail. The radiation-hardened TPS7H60x5-SP is also available in QMLP plastic packages. Additionally, the radiation-hardened TPS7H60x3-SP is available in QMLV ceramic packages.