TIDUFE5 July 2025
The LMG2650 is a 650V, 95mΩ, GaN-powered, FET half bridge. The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diodes, and high-side gate-drive level shifters in a 6mm by 8mm QFN package. Programmable turn-on slew rates provide EMI and ringing control. The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge. The LMG2650 protection features include FET turn-on interlock, undervoltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature shut down. The ultra-low slew rate setting supports motor drive applications.