TIDUFE5 July 2025
The LMG3651R025 GaN Field-Effect Transistor (FET) with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. Adjustable gate driver strength allow the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control Electromagnetic Interference (EMI) and optimize switching performance. Turn on slew rate can be varied from 10V/ns to 100V/ns, while the turn-off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include undervoltage lockout (UVLO), cycle-by-cycle overcurrent limit, short-circuit and overtemperature protection. The LMG3651R025 provides a 5V low dropout (LDO) output on the LDO5V pin that can be used to power an external digital isolator.