Gehäuseinformationen
| Gehäuse | Pins VSSOP (DGS) | 10 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 3.500 | LARGE T&R |
Merkmale von LM5106
- Drives Both a High-Side and Low-Side N-Channel
MOSFET - 1.8-A Peak Output Sink Current
- 1.2-A Peak Output Source Current
- Bootstrap Supply Voltage Range up to 118-V DC
- Single TTL Compatible Input
- Programmable Turn-On Delays (Dead-Time)
- Enable Input Pin
- Fast Turn-Off Propagation Delays (32 ns Typical)
- Drives 1000 pF with 15-ns Rise and 10-ns Fall Time
- Supply Rail Under-Voltage Lockout
- Low Power Consumption
- WSON-10 (4 mm × 4 mm) and VSSOP-10 Package
Beschreibung von LM5106
The LM5106 is a high voltage gate driver designed to drive both the high side and low side N-Channel MOSFETs in a synchronous buck or half bridge configuration. The floating high side driver is capable of working with rail voltages up to 100V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-on delay circuits. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Under-voltage lockout disables the gate driver when either the low side or the bootstrapped high side supply voltage is below the operating threshold. The LM5106 is offered in the VSSOP-10 or thermally enhanced 10-pin WSON plastic package.