Gehäuseinformationen
| Gehäuse | Pins WSON (NGT) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 4.500 | LARGE T&R |
Merkmale von LM5109B-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results
- Device Temperature Grade 1
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C4A
- Drives Both a High-Side and Low-Side N-Channel
MOSFET - 1-A Peak Output Current (1.0-A Sink/1.0-A
Source) - Independent TTL/CMOS Compatible Inputs
- Bootstrap Supply Voltage to 108-V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000-pF Load with 15-ns Rise and Fall
Times - Excellent Propagation Delay Matching (2 ns
Typical) - Supply Rail Under-Voltage Lockout
- Low Power Consumption
- Thermally-Enhanced WSON-8 Package
Beschreibung von LM5109B-Q1
The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.