Produktdetails

Bits (#) 3 Data rate (max) (Mbps) 50 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.65 Vin (max) (V) 3.3 Vout (min) (V) 1.65 Vout (max) (V) 3.3 Applications SIM Card Features Single LDO Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 3 Data rate (max) (Mbps) 50 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.65 Vin (max) (V) 3.3 Vout (min) (V) 1.65 Vout (max) (V) 3.3 Applications SIM Card Features Single LDO Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGT) 16 9 mm² 3 x 3
  • Level translator
    • VCC range of 1.65V to 3.3V
    • VBATT range from 2.3V to 5.5V
  • Low-dropout (LDO) regulator
    • 50mA LDO regulator with enable
    • Selectable output voltage of 1.8V or 2.95V
    • Input voltage range of 2.3V to 5.5V
    • Very low dropout of 100mV (maximum) at 50mA
  • Incorporates shutdown for the SIM card signals according to ISO7816-3
  • ESD protection exceeds JESD 22
    • 2000V Human-body model (A114-B)
    • 500V Charged-device model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 16-Pin VQFN (3mm × 3mm)
    • 12-Pin UQFN (2mm × 1.7mm)
  • Level translator
    • VCC range of 1.65V to 3.3V
    • VBATT range from 2.3V to 5.5V
  • Low-dropout (LDO) regulator
    • 50mA LDO regulator with enable
    • Selectable output voltage of 1.8V or 2.95V
    • Input voltage range of 2.3V to 5.5V
    • Very low dropout of 100mV (maximum) at 50mA
  • Incorporates shutdown for the SIM card signals according to ISO7816-3
  • ESD protection exceeds JESD 22
    • 2000V Human-body model (A114-B)
    • 500V Charged-device model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 16-Pin VQFN (3mm × 3mm)
    • 12-Pin UQFN (2mm × 1.7mm)

The TXS4555 device is a Smart Identity Module (SIM) card option that interfaces wireless baseband processors with a SIM card to store I/O for mobile handheld applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. The device includes a high-speed level translator that can support Class-B (2.95V) and Class-C (1.8V) interfaces, and a low dropout (LDO) voltage regulator with output voltages that are selectable between these interfaces.

The device has two supply voltage pins. VCC can operate over the full range of 1.65V to 3.3V and VBATT from 2.3 to 5.5V. VPWR is set to 1.8V or 2.95V, and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5V and outputs 1.8V or 2.95V at 50mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to interface low-voltage microprocessors to SIM cards operating at 1.8V or 2.95V.

The TXS4555 incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. During an accidental shutdown of the phone, shutting down the SIM card helps prevent data corruption. The device has 8 kV HBM protection for the SIM pins and standard 2 kV HBM protection for all other pins.

The TXS4555 device is a Smart Identity Module (SIM) card option that interfaces wireless baseband processors with a SIM card to store I/O for mobile handheld applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. The device includes a high-speed level translator that can support Class-B (2.95V) and Class-C (1.8V) interfaces, and a low dropout (LDO) voltage regulator with output voltages that are selectable between these interfaces.

The device has two supply voltage pins. VCC can operate over the full range of 1.65V to 3.3V and VBATT from 2.3 to 5.5V. VPWR is set to 1.8V or 2.95V, and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5V and outputs 1.8V or 2.95V at 50mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to interface low-voltage microprocessors to SIM cards operating at 1.8V or 2.95V.

The TXS4555 incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. During an accidental shutdown of the phone, shutting down the SIM card helps prevent data corruption. The device has 8 kV HBM protection for the SIM pins and standard 2 kV HBM protection for all other pins.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Datum
* Data sheet TXS4555 1.8V/3V SIM Card Power Supply With Level Translator datasheet (Rev. C) PDF | HTML 27 Mai 2026
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12 Jul 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 03 Jul 2024
Selection guide Voltage Translation Buying Guide (Rev. A) 15 Apr 2021

Design und Entwicklung

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Simulationsmodell

TXS4555 IBIS Model

SBOM452.ZIP (47 KB) - IBIS Model
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
UQFN (RUT) 12 Ultra Librarian
VQFN (RGT) 16 Ultra Librarian

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