Gehäuseinformationen
| Gehäuse | Pins SSOP (DWJ) | 36 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 750 | LARGE T&R |
Merkmale von UCC5870-Q1
- Split output driver provides 30-A peak source and 30-A peak sink currents
- Adjustable "on the fly" gate drive strength
- Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
- Primary and Secondary side active short circuit (ASC) support
- Configurable power transistor protections
- DESAT based short circuit protection
- Shunt resistor based overcurrent and short circuit protection
- NTC based overtemperature protection
- Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
- Functional Safety-Compliant
- Integrated diagnostics:
- Built-in self test (BIST) for protection comparators
- IN+ to transistor gate path integrity
- Power transistor threshold monitoring
- Internal clock monitoring
- Fault alarm (nFLT1) and warning (nFLT2) outputs
- Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
- Advanced high voltage clamping control
- Internal and external supply undervoltage and overvoltage protection
- Active output pulldown and default low outputs with low supply or floating inputs
- Driver die temperature sensing and overtemperature protection
- 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
- SPI based device reconfiguration, verification, supervision, and diagnosis
- Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
- Safety-related certifications:
- 3750– VRMS isolation for 1 minute per UL1577 (planned)
- AEC-Q100 qualified with the following results:
- Device temperature grade 0: –40°C to 125°C ambient operating temperature
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4b
Beschreibung von UCC5870-Q1
The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.